Temperature-accelerated dielectric breakdown in ultrathin gate oxides

C. C. Chen; C. Y. Chang; Chao-Hsin Chien; T. Y. Huang; Horng-Chih Lin; M. S. Liang

doi:10.1063/1.123228

Temperature-accelerated dielectric breakdown in ultrathin gate oxides

C. C. Chen^*, C. Y. Chang, Chao-Hsin Chien, T. Y. Huang, Horng-Chih Lin, M. S. Liang

^*此作品的通信作者

電子研究所

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

摘要

The aggravated temperature acceleration effects on oxide breakdown for oxide thickness range from 8.7 to 2.5 nm were investigated. The accelerated temperature dependence on dielectric breakdown of the scaled oxide may be ascribed to the increasing fraction of the structural transition layer.

原文	English
頁（從 - 到）	3708-3710
頁數	3
期刊	Applied Physics Letters
卷	74
發行號	24
DOIs	https://doi.org/10.1063/1.123228
出版狀態	Published - 14 6月 1999

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@article{e083f3774f9b45318bd5505de6592a21,

title = "Temperature-accelerated dielectric breakdown in ultrathin gate oxides",

abstract = "The aggravated temperature acceleration effects on oxide breakdown for oxide thickness range from 8.7 to 2.5 nm were investigated. The accelerated temperature dependence on dielectric breakdown of the scaled oxide may be ascribed to the increasing fraction of the structural transition layer.",

author = "Chen, {C. C.} and Chang, {C. Y.} and Chao-Hsin Chien and Huang, {T. Y.} and Horng-Chih Lin and Liang, {M. S.}",

year = "1999",

month = jun,

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doi = "10.1063/1.123228",

language = "English",

volume = "74",

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journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Temperature-accelerated dielectric breakdown in ultrathin gate oxides

AU - Chen, C. C.

AU - Chang, C. Y.

AU - Chien, Chao-Hsin

AU - Huang, T. Y.

AU - Lin, Horng-Chih

AU - Liang, M. S.

PY - 1999/6/14

Y1 - 1999/6/14

N2 - The aggravated temperature acceleration effects on oxide breakdown for oxide thickness range from 8.7 to 2.5 nm were investigated. The accelerated temperature dependence on dielectric breakdown of the scaled oxide may be ascribed to the increasing fraction of the structural transition layer.

AB - The aggravated temperature acceleration effects on oxide breakdown for oxide thickness range from 8.7 to 2.5 nm were investigated. The accelerated temperature dependence on dielectric breakdown of the scaled oxide may be ascribed to the increasing fraction of the structural transition layer.

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U2 - 10.1063/1.123228

DO - 10.1063/1.123228

M3 - Article

AN - SCOPUS:0032620499

SN - 0003-6951

VL - 74

SP - 3708

EP - 3710

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Temperature-accelerated dielectric breakdown in ultrathin gate oxides

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