Tellurium doping study of GaSb grown by molecular beam epitaxy using SnTe

Jenn-Fang Chen*, A. Y. Cho

*此作品的通信作者

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)

摘要

The application of SnTe as a tellurium source of donor impurities in the growth of n-type GaSb by molecular beam epitaxy (MBE) is investigated. We obtained Hall carrier concentrations ranging from 1.23×1016 to 3.7×1018 cm-3. At a growth temperature of 500°C, the estimated donor concentrations are proportional to the arrival rate of the molecular dopants up to 3×1018 cm-3. Room-temperature Hall mobilities as high as 5114 cm2/V⋯s were measured for a GaSb layer with nH=3.8×1016 cm-3. These results, coupled with the intensitivity of the electron concentration to the Sb4/Ga flux ratio, at a growth temperature of 500°C, may lead to SnTe being one of the donor dopants of choice in the MBE growth of n-type GaSb.

原文English
頁(從 - 到)619-622
頁數4
期刊Journal of Crystal Growth
111
發行號1-4
DOIs
出版狀態Published - 2 5月 1991

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