Tapered Cu pattern metallization by electrodeposition through mask

Shrane Ning Jenq; Chi Chao Wan; Yung Yun Wang; Hung Wei Li; Po-Tsun Liu; Jing Hon Chen

doi:10.1149/1.2236375

Tapered Cu pattern metallization by electrodeposition through mask

Shrane Ning Jenq^*, Chi Chao Wan, Yung Yun Wang, Hung Wei Li, Po-Tsun Liu, Jing Hon Chen

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

摘要

A tapered shape of Cu pattern by electrodeposition through mask is preferred for fabricating metal line on thin-film transistors (TFTs). The influence of individual organic additive [polyethylene glycol (PEG), bis-3-sodiumsulfopropyl disulfide (SPS)] on the sidewall shape of the Cu pattern was identified. A compromising effect shows up when both PEG and SPS are added owing to the competition of the behavior of two different organic additives during Cu electrodeposition. Therefore, a method has been developed for the fabrication of copper pattern used in TFTs, which forms a tapered pattern in one single Cu deposition step.

原文	English
頁（從 - 到）	C167-C170
頁數	4
期刊	Electrochemical and Solid-State Letters
卷	9
發行號	10
DOIs	https://doi.org/10.1149/1.2236375
出版狀態	Published - 1 8月 2006

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abstract = "A tapered shape of Cu pattern by electrodeposition through mask is preferred for fabricating metal line on thin-film transistors (TFTs). The influence of individual organic additive [polyethylene glycol (PEG), bis-3-sodiumsulfopropyl disulfide (SPS)] on the sidewall shape of the Cu pattern was identified. A compromising effect shows up when both PEG and SPS are added owing to the competition of the behavior of two different organic additives during Cu electrodeposition. Therefore, a method has been developed for the fabrication of copper pattern used in TFTs, which forms a tapered pattern in one single Cu deposition step.",

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AU - Jenq, Shrane Ning

AU - Wan, Chi Chao

AU - Wang, Yung Yun

AU - Li, Hung Wei

AU - Liu, Po-Tsun

AU - Chen, Jing Hon

PY - 2006/8/1

Y1 - 2006/8/1

N2 - A tapered shape of Cu pattern by electrodeposition through mask is preferred for fabricating metal line on thin-film transistors (TFTs). The influence of individual organic additive [polyethylene glycol (PEG), bis-3-sodiumsulfopropyl disulfide (SPS)] on the sidewall shape of the Cu pattern was identified. A compromising effect shows up when both PEG and SPS are added owing to the competition of the behavior of two different organic additives during Cu electrodeposition. Therefore, a method has been developed for the fabrication of copper pattern used in TFTs, which forms a tapered pattern in one single Cu deposition step.

AB - A tapered shape of Cu pattern by electrodeposition through mask is preferred for fabricating metal line on thin-film transistors (TFTs). The influence of individual organic additive [polyethylene glycol (PEG), bis-3-sodiumsulfopropyl disulfide (SPS)] on the sidewall shape of the Cu pattern was identified. A compromising effect shows up when both PEG and SPS are added owing to the competition of the behavior of two different organic additives during Cu electrodeposition. Therefore, a method has been developed for the fabrication of copper pattern used in TFTs, which forms a tapered pattern in one single Cu deposition step.

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SP - C167-C170

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

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ER -

Tapered Cu pattern metallization by electrodeposition through mask

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