TY - JOUR
T1 - TAOS based Cu/TiW/IGZO/Ga2O3/Pt bilayer CBRAM for low-power display technology
AU - Gan, Kai Jhih
AU - Liu, Po-Tsun
AU - Chiu, Yu Chuan
AU - Ruan, Dun Bao
AU - Chien, Ta Chun
AU - Sze, Simon M.
PY - 2018/11/25
Y1 - 2018/11/25
N2 - We demonstrate the characteristics of a conductive-bridging random access memory (CBRAM) with Cu/TiW/InGaZnO/Ga2O3/Pt stack structure. The addition of a thin metal-oxide layer (4.5 nm-thick Ga2O3) in the bottom of the CBRAM device significantly increases the off-state resistance (ROFF) and the memory window. The IGZO bi-layer CBRAM shows the excellent memory performances, such as low operation current (down to 50 μA), high on/off resistance ratio (>103), high switching endurance (up to 103 cycles) and the capability of multi-level tuning. Meanwhile, high thermal stability was also achieved. Three decades of resistance window is constantly maintained beyond 104 s at 85 °C. The resistive switching stability and electrical uniformity of bi-layer IGZO/Ga2O3 CBRAM device are obviously enhanced as compared with the one only with a single layer of IGZO film. These results have given a great potential for the transparent amorphous oxide semiconductor (TAOS)-based material utilizing in CBRAM stacks and integrating into the display circuits for future memory-in-pixel applications.
AB - We demonstrate the characteristics of a conductive-bridging random access memory (CBRAM) with Cu/TiW/InGaZnO/Ga2O3/Pt stack structure. The addition of a thin metal-oxide layer (4.5 nm-thick Ga2O3) in the bottom of the CBRAM device significantly increases the off-state resistance (ROFF) and the memory window. The IGZO bi-layer CBRAM shows the excellent memory performances, such as low operation current (down to 50 μA), high on/off resistance ratio (>103), high switching endurance (up to 103 cycles) and the capability of multi-level tuning. Meanwhile, high thermal stability was also achieved. Three decades of resistance window is constantly maintained beyond 104 s at 85 °C. The resistive switching stability and electrical uniformity of bi-layer IGZO/Ga2O3 CBRAM device are obviously enhanced as compared with the one only with a single layer of IGZO film. These results have given a great potential for the transparent amorphous oxide semiconductor (TAOS)-based material utilizing in CBRAM stacks and integrating into the display circuits for future memory-in-pixel applications.
KW - Conductive-bridge random access memory (CBRAM)
KW - Gallium oxide
KW - Indium-gallium-zinc-oxide
KW - Physical vapor deposition
KW - Thermal conductivity
UR - http://www.scopus.com/inward/record.url?scp=85053322017&partnerID=8YFLogxK
U2 - 10.1016/j.surfcoat.2018.08.093
DO - 10.1016/j.surfcoat.2018.08.093
M3 - Article
AN - SCOPUS:85053322017
SN - 0257-8972
VL - 354
SP - 169
EP - 174
JO - Surface and Coatings Technology
JF - Surface and Coatings Technology
ER -