Switching and synaptic characteristics of AZO/ZnO/ITO valence change memory device

F. M. Simanjuntak*, S. Chandrasekaran, F. Gapsari, Tseung-Yuen Tseng

*此作品的通信作者

研究成果: Conference article同行評審

1 引文 斯高帕斯(Scopus)

摘要

This paper reports the resistive switching and synaptic capability of AZO/ZnO/ITO transparent and flexiblevalence change memory device structure. The device performs stable endurance for more than 50 cycles with sufficient ON/OFF ratio of one order of magnitude; no intermediate state (data error) is observed during the cycle-to-cycle test. By exploiting the analog switching characteristic of the device and employing identical pulses to the top electrode, a synaptic behavior can be achieved. A low programming voltage of 1.5V is used to modulate the conductance during potentiation and depression which indicate that the device is a logic-compatible. The conduction mechanism during the switching processand the device performance is discussed.

原文English
文章編號012027
期刊IOP Conference Series: Materials Science and Engineering
494
發行號1
DOIs
出版狀態Published - 29 3月 2019
事件International Conference on Mechanical Engineering Research and Application 2018, ICOMERA 2018 - Malang, Indonesia
持續時間: 23 10月 201825 10月 2018

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