@inproceedings{3a7fe1967bdc44139e5371cf9324c02f,
title = "Surface potential and electric field mapping of p-well/n-well junction by secondary electron potential contrast and in-situ nanoprobe biasing",
abstract = "This study investigates the p-well/n-well junction by using secondary electron potential contrast (SEPC) with in-situ nanoprobe biasing. Experimental result demonstrated dopant contrast is restored after applying electricity in the junction nodes. Furthermore, the image contrast was converted to a voltage scale, allowing the junction surface potential and electric filed distribution to be identified. The proposed method demonstrates that an in-situ nanoprobe system is powerful in dopant area inspection in SEM, potentially contributing to an efficient method in analyzing site-specific failure in real circuits.",
author = "Lee, {Jeng Han} and Po-Tsun Liu and Wang, {M. H.} and Lin, {Y. T.} and Huan, {Y. S.} and David Su",
year = "2012",
month = jul,
doi = "10.1109/IPFA.2012.6306277",
language = "English",
isbn = "9781467309806",
series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",
pages = "1--3",
booktitle = "2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012",
note = "null ; Conference date: 02-07-2012 Through 06-07-2012",
}