Surface photovoltage spectroscopy characterization of a GaAs/GaAlAs vertical-cavity-surface-emitting-laser structure: Angle dependence

J. S. Liang*, Y. S. Huang, C. W. Tien, Y. M. Chang, C. W. Chen, N. Y. Li, Pei-Wen Li, Fred H. Pollak

*此作品的通信作者

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

An angle-dependent surface photovoltage spectroscopy (SPS) study has been performed at room temperature on a GaAs/GaAlAs-based vertical-cavity-surface-emitting-laser (VCSEL) structure emitting at a wavelength near 850 nm. For comparison purposes, we have also measured the angle-dependent reflectance (R). The surface photovoltage spectra exhibit both the fundamental conduction to heavy-hole (1C-1H) excitonic transition and cavity mode plus additional interference features related to the properties of the mirror stacks, whereas in the R spectra only the cavity mode and interference features are clearly visible. The energy position of the excitonic feature is not dependent on the angle of incidence, in contrast to that of the cavity mode, whose angular dependence can be fitted with a simple model. This study demonstrates the considerable potential of angle-dependent SPS for the contactless and nondestructive characterization of VCSEL structures at room temperature.

原文English
頁(從 - 到)3227-3229
頁數3
期刊Applied Physics Letters
79
發行號20
DOIs
出版狀態Published - 12 11月 2001

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