@inproceedings{77fbe11194ab456e8ffd2025f561be77,
title = "Surface Modification by Wet Treatment for Low-Temperature Cu/SiO2 Hybrid Bonding",
abstract = "Based on the surface analyses and bonding results, we concluded that the optimal wet surface modification solution are 0.5 M for both NaOH and KOH, which not only achieve sufficient hydrophilicity for bonding but also have the least roughening on the sample surface. Utilizing this treatment, we achieved robust Cu/SiO2 hybrid bonding with no noticeable gaps at the bonding interfaces at 200°C without pressure. A very low specific contact resistance of 3.4×10-9 Ω/cm2 can be obtained using the optimal wet treatment conditions.",
keywords = "3D IC integration, Cu/SiO hybrid bonding, Interfacial analysis, Low temperature bonding, Surface modification",
author = "Chen, {Yu An} and Ong, {Jia Juen} and Chiu, {Wei Lan} and Chang, {Hsiang Hung} and Chih Chen",
note = "Publisher Copyright: {\textcopyright} 2024 Japan Institute of Electronics Packaging.; 23rd International Conference on Electronics Packaging, ICEP 2024 ; Conference date: 17-04-2024 Through 20-04-2024",
year = "2024",
doi = "10.23919/ICEP61562.2024.10535588",
language = "English",
series = "2024 International Conference on Electronics Packaging, ICEP 2024",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "115--116",
booktitle = "2024 International Conference on Electronics Packaging, ICEP 2024",
address = "United States",
}