Suppression of Schottky leakage current in island-in amorphous silicon thin film transistors with the CuCuMg as source/drain metal

M. C. Wang, T. C. Chang*, Po-Tsun Liu, R. W. Xiao, L. F. Lin, Y. Y. Li, F. S. Huang, J. R. Chen

*此作品的通信作者

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

The feasibility of using CuCuMg as a source/drain metal for the island-in amorphous silicon thin film transistors (a-Si:H TFTs) has been investigated. The issue of adhesion between the Cu film and n+ -a-Si layer has been overcome by introducing the CuCuMg alloy. Furthermore, the suppression of Schottky leakage current in metal/ a-Si:H structure was also observed in the island-in a-Si:H TFT. The island-in a-Si:H TFT exhibited the mobility of 0.52 cm2 V s, the subthreshold slope of 0.78 Vdecade, and the Vth of 3.02 V. The experimental result also showed superior performance of the a-Si:H TFT with minimal loss of critical dimension and good thermal stability.

原文English
文章編號062103
頁數3
期刊Applied Physics Letters
91
發行號6
DOIs
出版狀態Published - 2007

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