摘要
The feasibility of using CuCuMg as a source/drain metal for the island-in amorphous silicon thin film transistors (a-Si:H TFTs) has been investigated. The issue of adhesion between the Cu film and n+ -a-Si layer has been overcome by introducing the CuCuMg alloy. Furthermore, the suppression of Schottky leakage current in metal/ a-Si:H structure was also observed in the island-in a-Si:H TFT. The island-in a-Si:H TFT exhibited the mobility of 0.52 cm2 V s, the subthreshold slope of 0.78 Vdecade, and the Vth of 3.02 V. The experimental result also showed superior performance of the a-Si:H TFT with minimal loss of critical dimension and good thermal stability.
原文 | English |
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文章編號 | 062103 |
頁數 | 3 |
期刊 | Applied Physics Letters |
卷 | 91 |
發行號 | 6 |
DOIs | |
出版狀態 | Published - 2007 |