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Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure
Po-Tsun Liu
*
, Chih Hsiang Chang
, Chih Jui Chang
*
此作品的通信作者
光電工程學系
研究成果
:
Article
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同行評審
34
引文 斯高帕斯(Scopus)
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指紋
指紋
深入研究「Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure」主題。共同形成了獨特的指紋。
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Keyphrases
Active Channel Layer
25%
Backchannel
100%
Bilayer Structure
100%
Channel Layer
25%
Defect States
25%
Degradation Process
25%
Deposition Process
25%
Electrical Degradation
25%
Electrical Reliability
25%
Illumination Stress
25%
Indium Tungsten Oxide
100%
Layer Deposition
25%
NbTi
50%
Oxide Thin-film Transistors
100%
Oxygen-rich
50%
Passivation Layer
75%
Photo-bias Stability
25%
Plasma-induced Damage
25%
Silica
25%
Tungsten Oxide Films
100%
Engineering
Active Channel
33%
Channel Layer
66%
Deposition Process
33%
Electrical Degradation Phenomenon
33%
Layer Structure
100%
Passivation Layer
100%
Plasma Damage
33%
Thin Films
33%
Thin-Film Transistor
100%
Physics
Indium
100%
Plasma Damage
33%
Thin Films
100%