Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure

Po-Tsun Liu*, Chih Hsiang Chang, Chih Jui Chang

*此作品的通信作者

研究成果: Article同行評審

32 引文 斯高帕斯(Scopus)

摘要

This study investigates the instability induced by bias temperature illumination stress (NBTIS) for an amorphous indium-tungsten-oxide thin film transistor (a-IWO TFT) with SiO 2 backchannel passivation layer (BPL). It is found that this electrical degradation phenomenon can be attributed to the generation of defect states during the BPL process, which deteriorates the photo-bias stability of a-IWO TFTs. A method proposed by adding an oxygen-rich a-IWO thin film upon the a-IWO active channel layer could effectively suppress the plasma damage to channel layer during BPL deposition process. The bi-layer a-IWO TFT structure with an oxygen-rich back channel exhibits superior electrical reliability of device under NBTIS.

原文English
文章編號261603
頁數4
期刊Applied Physics Letters
108
發行號26
DOIs
出版狀態Published - 27 6月 2016

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