摘要
The mechanism and the optimization of nitrogen implantation for suppression the boron penetration in p+- poly-Si gate metal-oxide-semiconductor capacitor is reported. This nitrogen co-implantation process exhibits a good suppression of boron penetration and a better electrical characteristic than that of control sample. It was found that nitrogen combines with the boron to form a B-X complex, retarding the penetration of boron itself, was identified by XPS measurements. The optimum nitrogen dosage is also found in this study.
原文 | English |
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頁(從 - 到) | 1364-1367 |
頁數 | 4 |
期刊 | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
卷 | 36 |
發行號 | 3 SUPPL. B |
DOIs | |
出版狀態 | Published - 3月 1997 |