Suppression of boron penetration in P+-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantation

Tien-Sheng Chao; Chao-Hsin Chien; C. P. Hao; M. C. Liaw; C. H. Chu; C. Y. Chang; T. F. Lei; W. T. Sun; C. H. Hsu

doi:10.1143/JJAP.36.1364

Suppression of boron penetration in P⁺-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantation

Tien-Sheng Chao^*, Chao-Hsin Chien, C. P. Hao, M. C. Liaw, C. H. Chu, C. Y. Chang, T. F. Lei, W. T. Sun, C. H. Hsu

^*此作品的通信作者

研究成果: Article › 同行評審

12 引文斯高帕斯（Scopus）

摘要

The mechanism and the optimization of nitrogen implantation for suppression the boron penetration in p⁺- poly-Si gate metal-oxide-semiconductor capacitor is reported. This nitrogen co-implantation process exhibits a good suppression of boron penetration and a better electrical characteristic than that of control sample. It was found that nitrogen combines with the boron to form a B-X complex, retarding the penetration of boron itself, was identified by XPS measurements. The optimum nitrogen dosage is also found in this study.

原文	English
頁（從 - 到）	1364-1367
頁數	4
期刊	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
卷	36
發行號	3 SUPPL. B
DOIs	https://doi.org/10.1143/JJAP.36.1364
出版狀態	Published - 3月 1997

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Chao, T.-S., Chien, C.-H., Hao, C. P., Liaw, M. C., Chu, C. H., Chang, C. Y., Lei, T. F., Sun, W. T., & Hsu, C. H. (1997). Suppression of boron penetration in P⁺-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantation. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 36(3 SUPPL. B), 1364-1367. https://doi.org/10.1143/JJAP.36.1364

@article{9d0e54e7288748059b0f88b0478d14c6,

title = "Suppression of boron penetration in P+-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantation",

abstract = "The mechanism and the optimization of nitrogen implantation for suppression the boron penetration in p+- poly-Si gate metal-oxide-semiconductor capacitor is reported. This nitrogen co-implantation process exhibits a good suppression of boron penetration and a better electrical characteristic than that of control sample. It was found that nitrogen combines with the boron to form a B-X complex, retarding the penetration of boron itself, was identified by XPS measurements. The optimum nitrogen dosage is also found in this study.",

keywords = "Boron penetration, Nitrogen, X-ray photoelectron spectroscopy, pMOSFET",

author = "Tien-Sheng Chao and Chao-Hsin Chien and Hao, {C. P.} and Liaw, {M. C.} and Chu, {C. H.} and Chang, {C. Y.} and Lei, {T. F.} and Sun, {W. T.} and Hsu, {C. H.}",

year = "1997",

month = mar,

doi = "10.1143/JJAP.36.1364",

language = "English",

volume = "36",

pages = "1364--1367",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "3 SUPPL. B",

}

Chao, T-S , Chien, C-H, Hao, CP, Liaw, MC, Chu, CH, Chang, CY, Lei, TF, Sun, WT & Hsu, CH 1997, 'Suppression of boron penetration in P⁺-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantation', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 卷 36, 編號 3 SUPPL. B, 頁 1364-1367. https://doi.org/10.1143/JJAP.36.1364

TY - JOUR

T1 - Suppression of boron penetration in P+-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantation

AU - Chao, Tien-Sheng

AU - Chien, Chao-Hsin

AU - Hao, C. P.

AU - Liaw, M. C.

AU - Chu, C. H.

AU - Chang, C. Y.

AU - Lei, T. F.

AU - Sun, W. T.

AU - Hsu, C. H.

PY - 1997/3

Y1 - 1997/3

N2 - The mechanism and the optimization of nitrogen implantation for suppression the boron penetration in p+- poly-Si gate metal-oxide-semiconductor capacitor is reported. This nitrogen co-implantation process exhibits a good suppression of boron penetration and a better electrical characteristic than that of control sample. It was found that nitrogen combines with the boron to form a B-X complex, retarding the penetration of boron itself, was identified by XPS measurements. The optimum nitrogen dosage is also found in this study.

AB - The mechanism and the optimization of nitrogen implantation for suppression the boron penetration in p+- poly-Si gate metal-oxide-semiconductor capacitor is reported. This nitrogen co-implantation process exhibits a good suppression of boron penetration and a better electrical characteristic than that of control sample. It was found that nitrogen combines with the boron to form a B-X complex, retarding the penetration of boron itself, was identified by XPS measurements. The optimum nitrogen dosage is also found in this study.

KW - Boron penetration

KW - Nitrogen

KW - X-ray photoelectron spectroscopy

KW - pMOSFET

UR - http://www.scopus.com/inward/record.url?scp=0000048168&partnerID=8YFLogxK

U2 - 10.1143/JJAP.36.1364

DO - 10.1143/JJAP.36.1364

M3 - Article

AN - SCOPUS:0000048168

SN - 0021-4922

VL - 36

SP - 1364

EP - 1367

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 3 SUPPL. B

ER -

Suppression of boron penetration in P+-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantation

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Suppression of boron penetration in P⁺-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantation