Suppression of boron penetration in P+-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantation

Tien-Sheng Chao*, Chao-Hsin Chien, C. P. Hao, M. C. Liaw, C. H. Chu, C. Y. Chang, T. F. Lei, W. T. Sun, C. H. Hsu

*此作品的通信作者

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

The mechanism and the optimization of nitrogen implantation for suppression the boron penetration in p+- poly-Si gate metal-oxide-semiconductor capacitor is reported. This nitrogen co-implantation process exhibits a good suppression of boron penetration and a better electrical characteristic than that of control sample. It was found that nitrogen combines with the boron to form a B-X complex, retarding the penetration of boron itself, was identified by XPS measurements. The optimum nitrogen dosage is also found in this study.

原文English
頁(從 - 到)1364-1367
頁數4
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
36
發行號3 SUPPL. B
DOIs
出版狀態Published - 3月 1997

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