The mechanism and the optimization of nitrogen implantation for suppression the boron penetration in p+- poly-Si gate metal-oxide-semiconductor capacitor is reported. This nitrogen co-implantation process exhibits a good suppression of boron penetration and a better electrical characteristic than that of control sample. It was found that nitrogen combines with the boron to form a B-X complex, retarding the penetration of boron itself, was identified by XPS measurements. The optimum nitrogen dosage is also found in this study.
|頁（從 - 到）||1364-1367|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|發行號||3 SUPPL. B|
|出版狀態||Published - 3月 1997|