Suppression of boron penetration by using inductive-coupling-nitrogen-plasma in stacked amorphous/polysilicon gate structure

Wen Luh Yang*, Chiou Jyi Lin, Tien-Sheng Chao, Don Gey Liu, Tan Fu Lei

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

A method is introduced for suppressing the penetration of boron for BF2+-implanted pMOS devices with a stacked amorphous/ poly-Si (SAP) gate structure. It is shown that after inductive-coupling-nitrogen-plasma (ICNP) treatment, boron diffusion through the thin gate oxide is largely suppressed. As shown from the charge-to-breakdown measurements, the ICNP process will improve the quality of pMOS devices, with Qbd three times higher than for the control samples.

原文English
頁(從 - 到)1139-1140
頁數2
期刊Electronics Letters
33
發行號13
DOIs
出版狀態Published - 19 6月 1997

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