摘要
A method is introduced for suppressing the penetration of boron for BF2+-implanted pMOS devices with a stacked amorphous/ poly-Si (SAP) gate structure. It is shown that after inductive-coupling-nitrogen-plasma (ICNP) treatment, boron diffusion through the thin gate oxide is largely suppressed. As shown from the charge-to-breakdown measurements, the ICNP process will improve the quality of pMOS devices, with Qbd three times higher than for the control samples.
原文 | English |
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頁(從 - 到) | 1139-1140 |
頁數 | 2 |
期刊 | Electronics Letters |
卷 | 33 |
發行號 | 13 |
DOIs | |
出版狀態 | Published - 19 6月 1997 |