Suppression of boron penetration by using inductive-coupling-nitrogen-plasma in stacked amorphous/polysilicon gate structure

Wen Luh Yang; Chiou Jyi Lin; Tien-Sheng Chao; Don Gey Liu; Tan Fu Lei

doi:10.1049/el:19970706

Suppression of boron penetration by using inductive-coupling-nitrogen-plasma in stacked amorphous/polysilicon gate structure

Wen Luh Yang^*, Chiou Jyi Lin, Tien-Sheng Chao, Don Gey Liu, Tan Fu Lei

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

摘要

A method is introduced for suppressing the penetration of boron for BF₂⁺-implanted pMOS devices with a stacked amorphous/ poly-Si (SAP) gate structure. It is shown that after inductive-coupling-nitrogen-plasma (ICNP) treatment, boron diffusion through the thin gate oxide is largely suppressed. As shown from the charge-to-breakdown measurements, the ICNP process will improve the quality of pMOS devices, with Q_bd three times higher than for the control samples.

原文	English
頁（從 - 到）	1139-1140
頁數	2
期刊	Electronics Letters
卷	33
發行號	13
DOIs	https://doi.org/10.1049/el:19970706
出版狀態	Published - 19 6月 1997

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abstract = "A method is introduced for suppressing the penetration of boron for BF2+-implanted pMOS devices with a stacked amorphous/ poly-Si (SAP) gate structure. It is shown that after inductive-coupling-nitrogen-plasma (ICNP) treatment, boron diffusion through the thin gate oxide is largely suppressed. As shown from the charge-to-breakdown measurements, the ICNP process will improve the quality of pMOS devices, with Qbd three times higher than for the control samples.",

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author = "Yang, {Wen Luh} and Lin, {Chiou Jyi} and Tien-Sheng Chao and Liu, {Don Gey} and Lei, {Tan Fu}",

year = "1997",

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T1 - Suppression of boron penetration by using inductive-coupling-nitrogen-plasma in stacked amorphous/polysilicon gate structure

AU - Yang, Wen Luh

AU - Lin, Chiou Jyi

AU - Chao, Tien-Sheng

AU - Liu, Don Gey

AU - Lei, Tan Fu

PY - 1997/6/19

Y1 - 1997/6/19

N2 - A method is introduced for suppressing the penetration of boron for BF2+-implanted pMOS devices with a stacked amorphous/ poly-Si (SAP) gate structure. It is shown that after inductive-coupling-nitrogen-plasma (ICNP) treatment, boron diffusion through the thin gate oxide is largely suppressed. As shown from the charge-to-breakdown measurements, the ICNP process will improve the quality of pMOS devices, with Qbd three times higher than for the control samples.

AB - A method is introduced for suppressing the penetration of boron for BF2+-implanted pMOS devices with a stacked amorphous/ poly-Si (SAP) gate structure. It is shown that after inductive-coupling-nitrogen-plasma (ICNP) treatment, boron diffusion through the thin gate oxide is largely suppressed. As shown from the charge-to-breakdown measurements, the ICNP process will improve the quality of pMOS devices, with Qbd three times higher than for the control samples.

KW - MOS integrated circuits

KW - Plasma

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U2 - 10.1049/el:19970706

DO - 10.1049/el:19970706

M3 - Article

AN - SCOPUS:0031163713

SN - 0013-5194

VL - 33

SP - 1139

EP - 1140

JO - Electronics Letters

JF - Electronics Letters

IS - 13

ER -

Suppression of boron penetration by using inductive-coupling-nitrogen-plasma in stacked amorphous/polysilicon gate structure

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