A method is introduced for suppressing the penetration of boron for BF2+-implanted pMOS devices with a stacked amorphous/ poly-Si (SAP) gate structure. It is shown that after inductive-coupling-nitrogen-plasma (ICNP) treatment, boron diffusion through the thin gate oxide is largely suppressed. As shown from the charge-to-breakdown measurements, the ICNP process will improve the quality of pMOS devices, with Qbd three times higher than for the control samples.
|頁（從 - 到）||1139-1140|
|出版狀態||Published - 19 6月 1997|