SUPPRESSION OF ANOMALOUS DRAIN CURRENT IN SHORT CHANNEL MOSFET.

Masami Konaka*, Hiroshi Iwai, Yoshio Nishi

*此作品的通信作者

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

The current voltage characteristics of short-channel nMOSFET in the subthreshold region are investigated by two-dimensional numerical analysis. Deep ion implantation of acceptor impurities beneath the channel is found to improve these characteristics. Structure optimization for the deeply ion-implanted short-channel MOSFET is carried out to obtain low subthreshold current with steep semilogarithmic slope, which is almost comparable with the long-channel MOSFET.

原文English
頁(從 - 到)27-33
頁數7
期刊Japanese Journal of Applied Physics
18
發行號S1
DOIs
出版狀態Published - 1980
事件Proc Conf Solid State Devices 10th - Tokyo, Jpn
持續時間: 29 8月 197830 8月 1978

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