Suppressing the leakage on ain gate dielectrics and its application on low-voltage organic thin-film transistors

Hsiao-Wen Zan*, Kuo Hsi Yen, Chien Hsun Chen, Pu Kuan Liu, O. Hsin Ku, Jennchang Hwang

*此作品的通信作者

研究成果: Conference article同行評審

摘要

In this paper, the low temperature AlN film (150°C) was proposed as the gate insulator for OTFTs. With the controlling of nitrogen gas flow rate, we suppressed the AlN dielectric leakage. The demonstrated AlN-OTFTs could be operated at low voltage (<5V), low threshold voltage (-1.5V) and extremely low sub-threshold swing (∼104mV/dec). Under the low-voltage biasing, the on/of current ratio was remained as high as >105 and the averaged field effect mobility was in the range 0.02-0.1cm2/V-sec.

原文English
頁(從 - 到)296-298
頁數3
期刊SID Conference Record of the International Display Research Conference
出版狀態Published - 1月 2006
事件SID 26th International Display Research Conference - Kent, OH, 美國
持續時間: 18 9月 200621 9月 2006

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