摘要
In this paper, the low temperature AlN film (150°C) was proposed as the gate insulator for OTFTs. With the controlling of nitrogen gas flow rate, we suppressed the AlN dielectric leakage. The demonstrated AlN-OTFTs could be operated at low voltage (<5V), low threshold voltage (-1.5V) and extremely low sub-threshold swing (∼104mV/dec). Under the low-voltage biasing, the on/of current ratio was remained as high as >105 and the averaged field effect mobility was in the range 0.02-0.1cm2/V-sec.
原文 | English |
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頁(從 - 到) | 296-298 |
頁數 | 3 |
期刊 | SID Conference Record of the International Display Research Conference |
出版狀態 | Published - 1月 2006 |
事件 | SID 26th International Display Research Conference - Kent, OH, 美國 持續時間: 18 9月 2006 → 21 9月 2006 |