Suppressing the initial growth of sidewall GaN by modifying micron-sized patterned sapphire substrate with H3PO4-based etchant

Wen Yang Hsu, Yuan Chi Lian, Pei Yu Wu, Wei Min Yong, Jinn Kong Sheu, Kun Lin Lin, Yew-Chuhg Wu*

*此作品的通信作者

研究成果: Article › 同行評審

3 引文 斯高帕斯（Scopus）

指紋

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Keyphrases

Material Science

Engineering