Suppressing phosphorus diffusion in germanium by carbon incorporation

G. Luo; C. C. Cheng; C. Y. Huang; S. L. Hsu; Chao-Hsin Chien; W. X. Ni; C. Y. Chang

doi:10.1049/el:20052999

Suppressing phosphorus diffusion in germanium by carbon incorporation

G. Luo^*, C. C. Cheng, C. Y. Huang, S. L. Hsu, Chao-Hsin Chien, W. X. Ni, C. Y. Chang

^*此作品的通信作者

研究成果: Article › 同行評審

13 引文斯高帕斯（Scopus）

摘要

A problem in the Ge MOSFET process is that the phosphorus for n-type doping in Ge diffuses very fast. It is very difficult to form the shallow source/drain p-n junctions. It is reported, for the first time, that the phosphorus diffusion in Ge during activation (or annealing) can be suppressed effectively owing to carbon incorporation.

原文	English
頁（從 - 到）	1354-1355
頁數	2
期刊	Electronics Letters
卷	41
發行號	24
DOIs	https://doi.org/10.1049/el:20052999
出版狀態	Published - 24 11月 2005

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title = "Suppressing phosphorus diffusion in germanium by carbon incorporation",

abstract = "A problem in the Ge MOSFET process is that the phosphorus for n-type doping in Ge diffuses very fast. It is very difficult to form the shallow source/drain p-n junctions. It is reported, for the first time, that the phosphorus diffusion in Ge during activation (or annealing) can be suppressed effectively owing to carbon incorporation.",

author = "G. Luo and Cheng, {C. C.} and Huang, {C. Y.} and Hsu, {S. L.} and Chao-Hsin Chien and Ni, {W. X.} and Chang, {C. Y.}",

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AU - Luo, G.

AU - Cheng, C. C.

AU - Huang, C. Y.

AU - Hsu, S. L.

AU - Chien, Chao-Hsin

AU - Ni, W. X.

AU - Chang, C. Y.

PY - 2005/11/24

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N2 - A problem in the Ge MOSFET process is that the phosphorus for n-type doping in Ge diffuses very fast. It is very difficult to form the shallow source/drain p-n junctions. It is reported, for the first time, that the phosphorus diffusion in Ge during activation (or annealing) can be suppressed effectively owing to carbon incorporation.

AB - A problem in the Ge MOSFET process is that the phosphorus for n-type doping in Ge diffuses very fast. It is very difficult to form the shallow source/drain p-n junctions. It is reported, for the first time, that the phosphorus diffusion in Ge during activation (or annealing) can be suppressed effectively owing to carbon incorporation.

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DO - 10.1049/el:20052999

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EP - 1355

JO - Electronics Letters

JF - Electronics Letters

IS - 24

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Suppressing phosphorus diffusion in germanium by carbon incorporation

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