TY - GEN
T1 - Suppressed Fin-LER induced variability in negative capacitance FinFETs
AU - Lee, Ho Pei
AU - Su, Pin
N1 - Publisher Copyright:
© 2017 JSAP.
PY - 2017/12/29
Y1 - 2017/12/29
N2 - This work investigates the impact of fin-LER on the subthreshold characteristics of the negative-capacitance FinFETs by TCAD atomistic simulation coupled with the Landau-Khalatnikov equation. Our study indicates that the variability for Vt, SS and DIBL can be suppressed by the negative-capacitance feedback mechanism. The ferroelectric layer exhibits larger gate voltage amplification for the device with more severe short channel effect and vice versa, and explains the superior immunity to LER variation for the negative capacitance FinFETs.
AB - This work investigates the impact of fin-LER on the subthreshold characteristics of the negative-capacitance FinFETs by TCAD atomistic simulation coupled with the Landau-Khalatnikov equation. Our study indicates that the variability for Vt, SS and DIBL can be suppressed by the negative-capacitance feedback mechanism. The ferroelectric layer exhibits larger gate voltage amplification for the device with more severe short channel effect and vice versa, and explains the superior immunity to LER variation for the negative capacitance FinFETs.
UR - http://www.scopus.com/inward/record.url?scp=85051073034&partnerID=8YFLogxK
U2 - 10.23919/SNW.2017.8242282
DO - 10.23919/SNW.2017.8242282
M3 - Conference contribution
AN - SCOPUS:85051073034
T3 - 2017 Silicon Nanoelectronics Workshop, SNW 2017
SP - 31
EP - 32
BT - 2017 Silicon Nanoelectronics Workshop, SNW 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 22nd Silicon Nanoelectronics Workshop, SNW 2017
Y2 - 4 June 2017 through 5 June 2017
ER -