TY - GEN
T1 - Superior Immunity to Trapped-Charge induced Variability in 2D FeFET NVMs
AU - Liu, You Sheng
AU - Su, Pin
N1 - Publisher Copyright:
© 2021 IEEE. All rights reserved.
PY - 2021
Y1 - 2021
N2 - This work investigates the trapped-charge induced variability for 2D FeFET NVMs with the aid of TCAD atomistic simulations. Our study indicates that, compared with the Si channel, monolayer MoS2 channel with larger band gap and electron affinity can result in an FeFET NVM with larger memory window (MW). In addition, the 2D FeFET with monolayer MoS2 channel can also possess superior immunity to trapped-charge induced variability due to its atomically-thin channel thickness.
AB - This work investigates the trapped-charge induced variability for 2D FeFET NVMs with the aid of TCAD atomistic simulations. Our study indicates that, compared with the Si channel, monolayer MoS2 channel with larger band gap and electron affinity can result in an FeFET NVM with larger memory window (MW). In addition, the 2D FeFET with monolayer MoS2 channel can also possess superior immunity to trapped-charge induced variability due to its atomically-thin channel thickness.
UR - http://www.scopus.com/inward/record.url?scp=85124891301&partnerID=8YFLogxK
U2 - 10.1109/SNW51795.2021.00015
DO - 10.1109/SNW51795.2021.00015
M3 - Conference contribution
AN - SCOPUS:85124891301
T3 - 2021 Silicon Nanoelectronics Workshop, SNW 2021
BT - 2021 Silicon Nanoelectronics Workshop, SNW 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 26th Silicon Nanoelectronics Workshop, SNW 2021
Y2 - 13 June 2021
ER -