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Superior High Transistor’s Effective Mobility of 325 cm
2
/V-s by 5 nm Quasi-Two-Dimensional SnON nFET
Pheiroijam Pooja
, Chun Che Chien
,
Albert Chin
*
*
此作品的通信作者
電子研究所
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4
引文 斯高帕斯(Scopus)
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/V-s by 5 nm Quasi-Two-Dimensional SnON nFET」主題。共同形成了獨特的指紋。
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Field-effect Transistors
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Transistor
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Gate Oxide
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Body Thickness
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Effective Mobility
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Thin Body
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Quasi-two-dimensional
100%
Silica
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Single-crystalline
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Insulator
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Order of Magnitude
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3D IC
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Three-dimensional (3D)
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Nanosheets
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High Dielectric Constant
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InGaAs
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Electron Density
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Effective Field
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New Discovery
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Oxide Surfaces
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Bulk Si
50%
Ultra-thin Body
50%
Nanocrystalline
50%
Channel Material
50%
Embedded Memory
50%
Surface Scattering
50%
Crystalline Si
50%
Electronic Wave Functions
50%
Decay Rate
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Effective Mass
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Nitrogen Content
50%
Universal Curve
50%
Two-dimensional MoS2
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Record-breaking
50%
Oxide-semiconductor Interfaces
50%
Biological Brain
50%
Polar Optical Phonon Scattering
50%
Engineering
Field-Effect Transistor
100%
Two Dimensional
100%
Gate Oxide
66%
Three Dimensional Integrated Circuits
33%
High Dielectric Constant
33%
Indium Gallium Arsenide
33%
Optical Phonon
33%
Effective Field
33%
Nanocrystalline
33%
Oxide Semiconductor
33%
Nanosheet
33%
Silicon Dioxide
33%
Carrier Concentration
33%
Molybdenum Disulfide
33%
Material Science
Transistor
100%
Field Effect Transistor
100%
Electronic Circuit
50%
Permittivity
50%
Carrier Concentration
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Nanosheet
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Indium Gallium Arsenide
50%
Oxide Semiconductor
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Oxide Surface
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Nanocrystalline
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Physics
Field Effect Transistor
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Integrated Circuit
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Electron Density
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Phonon
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