TY - GEN
T1 - Subthreshold FinFET SRAM cell optimization considering surface-orientation dependent variability
AU - Fan, Ming Long
AU - Hu, Vita Pi Ho
AU - Hsieh, Chien Yu
AU - Su, Pin
AU - Chuang, Ching Te
PY - 2010
Y1 - 2010
N2 - This work investigates the impact of device intrinsic variation on the stability/variability of subthreshold 6T FinFET SRAM cells with (110)/(100) surface orientations. Due to the difference in the degree of quantum confinement, NFET with (110) orientation shows larger fin Line-Edge-Roughness (LER) induced threshold-voltage variation than the (100) one, while PFET shows the opposite trend. Therefore, the stability of conventional (PU, PD, PG) = (110, 110, 110) cell is inferior and fails to provide sufficient margin. With the optimized orientation, significant μ/σ ratio improvement can be achieved by using (PU, PD, PG) = (110, 100, 100) SRAM cell. Our analysis establishes the potential of 6T FinFET cells with appropriate optimization for emerging subthreshold SRAM applications.
AB - This work investigates the impact of device intrinsic variation on the stability/variability of subthreshold 6T FinFET SRAM cells with (110)/(100) surface orientations. Due to the difference in the degree of quantum confinement, NFET with (110) orientation shows larger fin Line-Edge-Roughness (LER) induced threshold-voltage variation than the (100) one, while PFET shows the opposite trend. Therefore, the stability of conventional (PU, PD, PG) = (110, 110, 110) cell is inferior and fails to provide sufficient margin. With the optimized orientation, significant μ/σ ratio improvement can be achieved by using (PU, PD, PG) = (110, 100, 100) SRAM cell. Our analysis establishes the potential of 6T FinFET cells with appropriate optimization for emerging subthreshold SRAM applications.
UR - http://www.scopus.com/inward/record.url?scp=78649943178&partnerID=8YFLogxK
U2 - 10.1109/ESSDERC.2010.5618391
DO - 10.1109/ESSDERC.2010.5618391
M3 - Conference contribution
AN - SCOPUS:78649943178
SN - 9781424466610
T3 - 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010
SP - 198
EP - 201
BT - 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010
T2 - 2010 European Solid State Device Research Conference, ESSDERC 2010
Y2 - 14 September 2010 through 16 September 2010
ER -