Substrate bias dependence of breakdown progression in ultrathin oxide pMOSFETs

C. W. Tsai*, M. C. Chen, S. H. Gu, Ta-Hui Wang

*此作品的通信作者

    研究成果: Letter同行評審

    5 引文 斯高帕斯(Scopus)

    摘要

    Negative substrate bias-enhanced oxide breakdown (BD) progression in ultrathin oxide (1.4 nm) pMOS is observed. The enhanced progression is attributed to the increase of hole-stress current resulting from BD-induced, channel-carrier heating. The carrier temperature extracted from the spectral distribution of hot-carrier luminescence is around 1300 K. The substrate bias dependence of post-BD hole-tunneling current is confirmed from measurement and calculation. The observed phenomenon is particularly significant to ultrathin gate oxide reliability in floating substrate (SOI) and forward-biased substrate devices.

    原文English
    頁(從 - 到)269-271
    頁數3
    期刊IEEE Electron Device Letters
    24
    發行號4
    DOIs
    出版狀態Published - 1 四月 2003

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