Submicrometer p-Type SnO Thin-Film Transistors Fabricated by Film Profile Engineering Method

Ming Hung Wu, Horng-Chih Lin*, Pei-Wen Li

*此作品的通信作者

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

We reported the fabrication of submicrometer p-type tin monoxide (SnO) thin-film transistors (TFTs) with a channel length of 0.2μm for back-end-of-line applications using a film profile engineering (FPE) approach. Material analyses indicate that the as-deposited SnO films are amorphous, while be transformed to polycrystalline after a thermal annealing in oxygen ambient. Fabricated p-type SnO FPE-TFTs of a channel length of 0.2μm were manifested with ON/OFF current ratio higher than 105 and subthreshold slope of 320 mV/decade, superior to the data of submicrometer SnO devices ever reported. The extracted field-effect mobility is about 0.25 cm2/V·s. After ruling out the influence of source/drain series resistance, the intrinsic field-effect mobility is found to be about 1 cm/V·s.

原文English
文章編號8643587
頁(從 - 到)1766-1771
頁數6
期刊IEEE Transactions on Electron Devices
66
發行號4
DOIs
出版狀態Published - 1 4月 2019

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