@article{a320b3de3ba1423d89b959311dc8cd85,
title = "Sub-100 nm ALD-assisted nanoimprint lithography for realizing vertical organic transistors with high ON/OFF ratio and high output current",
abstract = "We introduced a conformal atomic-layer-deposited aluminum oxide layer to cover the imprint mold to reduce the feature size and to strengthen the mold durability. A nano-hole array pattern with diameter down to 85 nm was successfully transferred to sample substrate to fabricate a vertical organic transistor. The Imprint vertical organic transistor exhibited high output current density as 4.35 cm2/V s and high ON/OFF current ratio as 11,000 at a low operation voltage as 1.5 V.",
keywords = "Atomic layer deposition (ALD), Nanoimprint, Organic transistor, Vertical channel",
author = "Yung Hsu and Xiang Fang and Wang, {Lon A.} and Hsiao-Wen Zan and Hsin-Fei Meng and Sheng-Hsiung Yang",
note = "Publisher Copyright: {\textcopyright} 2014 Elsevier B.V. All rights reserved.",
year = "2014",
month = dec,
doi = "10.1016/j.orgel.2014.10.008",
language = "English",
volume = "15",
pages = "3609--3614",
journal = "Organic Electronics",
issn = "1566-1199",
publisher = "Elsevier B.V.",
number = "12",
}