@inproceedings{86ed615393be4a829b3dfc611b859912,
title = "Study on the Guard Rings for Latchup Prevention between HV-PMOS and LV-PMOS in a 0.15-μm BCD Process",
abstract = "An abnormal lower latchup immunity is really induced by the guard rings which were originally applied to prevent latchup occurrence between the HV-PMOS and LV-PMOS in a 0.15-μm BCD process. The parasitic npn BJT, that exits between the guard rings from HV-NW (biased at highvoltage VDDH) to the LV-NW (biased at low-voltage VDDL), may cause a holding voltage lower than the voltage difference between VDDH and VDDL. To apply the guard rings for latchup prevention, the study results reported in this work are very important to the foundries and the IC design houses.",
keywords = "Guard Rings, High-Voltage CMOS, Latchup, Latchup Prevention, bipolar-CMOS-DMOS (BCD) process",
author = "Chen, {Chao Yang} and Lee, {Jian Hsing} and Karuna Nidhi and Bin, {Tzer Yaa} and Lin, {Geeng Lih} and Ming-Dou Ker",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Reliability Physics Symposium, IRPS 2021 ; Conference date: 21-03-2021 Through 24-03-2021",
year = "2021",
month = mar,
doi = "10.1109/IRPS46558.2021.9405113",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 IEEE International Reliability Physics Symposium, IRPS 2021 - Proceedings",
address = "United States",
}