Study on the ESD-induced gate-oxide breakdown and the protection solution in 28nm high-k metal-gate CMOS technology

Chun Yu Lin, Ming-Dou Ker, Pin Hsin Chang, Wen Tai Wang

研究成果: Conference contribution › 同行評審

9 引文 斯高帕斯（Scopus）

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Keyphrases

Engineering

Material Science