Study on SONOS nonvolatile memory technology using high-density plasma CVD silicon nitride

T. C. Chang; S. T. Yan; Po-Tsun Liu; C. W. Chen; Y. C. Wu; S. M. Sze

doi:10.1149/1.1695537

Study on SONOS nonvolatile memory technology using high-density plasma CVD silicon nitride

T. C. Chang^*, S. T. Yan, Po-Tsun Liu, C. W. Chen, Y. C. Wu, S. M. Sze

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

摘要

With the replacement of silicon nitride in an oxide/nitride/oxide (ONO) gate-stacked structure, trap-rich high-density plasma chemical vapor deposited (HDPCVD) SiN_x. shows a more significant threshold-voltage shift (memory window) than that of conventional low pressure (LP) CVD Si ₃N₄. Also, low-temperature (200°C) deposited HDPCVD silicon nitride shows a good retention characteristic, the same as high-temperature (780°C) LPCVD Si₃N₄. With the optimization of thickness in the gate-stacked ONO structure, low-voltage and reliable operation, lower than 5 V, is realizable.

原文	English
頁（從 - 到）	G113-G115
頁數	3
期刊	Electrochemical and Solid-State Letters
卷	7
發行號	6
DOIs	https://doi.org/10.1149/1.1695537
出版狀態	Published - 16 6月 2004

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abstract = "With the replacement of silicon nitride in an oxide/nitride/oxide (ONO) gate-stacked structure, trap-rich high-density plasma chemical vapor deposited (HDPCVD) SiNx. shows a more significant threshold-voltage shift (memory window) than that of conventional low pressure (LP) CVD Si 3N4. Also, low-temperature (200°C) deposited HDPCVD silicon nitride shows a good retention characteristic, the same as high-temperature (780°C) LPCVD Si3N4. With the optimization of thickness in the gate-stacked ONO structure, low-voltage and reliable operation, lower than 5 V, is realizable.",

author = "Chang, {T. C.} and Yan, {S. T.} and Po-Tsun Liu and Chen, {C. W.} and Wu, {Y. C.} and Sze, {S. M.}",

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T1 - Study on SONOS nonvolatile memory technology using high-density plasma CVD silicon nitride

AU - Chang, T. C.

AU - Yan, S. T.

AU - Liu, Po-Tsun

AU - Chen, C. W.

AU - Wu, Y. C.

AU - Sze, S. M.

PY - 2004/6/16

Y1 - 2004/6/16

N2 - With the replacement of silicon nitride in an oxide/nitride/oxide (ONO) gate-stacked structure, trap-rich high-density plasma chemical vapor deposited (HDPCVD) SiNx. shows a more significant threshold-voltage shift (memory window) than that of conventional low pressure (LP) CVD Si 3N4. Also, low-temperature (200°C) deposited HDPCVD silicon nitride shows a good retention characteristic, the same as high-temperature (780°C) LPCVD Si3N4. With the optimization of thickness in the gate-stacked ONO structure, low-voltage and reliable operation, lower than 5 V, is realizable.

AB - With the replacement of silicon nitride in an oxide/nitride/oxide (ONO) gate-stacked structure, trap-rich high-density plasma chemical vapor deposited (HDPCVD) SiNx. shows a more significant threshold-voltage shift (memory window) than that of conventional low pressure (LP) CVD Si 3N4. Also, low-temperature (200°C) deposited HDPCVD silicon nitride shows a good retention characteristic, the same as high-temperature (780°C) LPCVD Si3N4. With the optimization of thickness in the gate-stacked ONO structure, low-voltage and reliable operation, lower than 5 V, is realizable.

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U2 - 10.1149/1.1695537

DO - 10.1149/1.1695537

M3 - Article

AN - SCOPUS:2642575115

SN - 1099-0062

VL - 7

SP - G113-G115

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 6

ER -

Study on SONOS nonvolatile memory technology using high-density plasma CVD silicon nitride

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