With the replacement of silicon nitride in an oxide/nitride/oxide (ONO) gate-stacked structure, trap-rich high-density plasma chemical vapor deposited (HDPCVD) SiNx. shows a more significant threshold-voltage shift (memory window) than that of conventional low pressure (LP) CVD Si 3N4. Also, low-temperature (200°C) deposited HDPCVD silicon nitride shows a good retention characteristic, the same as high-temperature (780°C) LPCVD Si3N4. With the optimization of thickness in the gate-stacked ONO structure, low-voltage and reliable operation, lower than 5 V, is realizable.
|頁（從 - 到）||G113-G115|
|期刊||Electrochemical and Solid-State Letters|
|出版狀態||Published - 16 6月 2004|