Study on pressure-independent Cu removal in Cu abrasive-free polishing

J. Y. Fang*, P. W. Huang, M. S. Tsai, B. T. Dai, Yew-Chuhg Wu, M. S. Feng

*此作品的通信作者

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

Pattern effect, a critical issue in metal planarization, results from different pattern designs bringing a variation of effective local pressure. In order to optimize the pattern effect in Cu planarization, Cu removal should be pressure independent. Recently, it was found that Cu abrasive-free polishing (AFP) technology could benefit pressure-independent Cu removal for Cu planarization by controlling the down force. In this study, by using 5-methyl-1H-benzotriazole as a corrosion inhibitor, pressure-independent Cu removal with AFP slurries can be achieved below a 3 psi down force. Thus, the pattern effect in Cu planarization can be optimized with AFP slurries by low down force.

原文English
期刊Electrochemical and Solid-State Letters
9
發行號1
DOIs
出版狀態Published - 10 4月 2006

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