Study on pressure-independent Cu removal in Cu abrasive-free polishing

J. Y. Fang; P. W. Huang; M. S. Tsai; B. T. Dai; Yew-Chuhg Wu; M. S. Feng

doi:10.1149/1.2137469

Study on pressure-independent Cu removal in Cu abrasive-free polishing

J. Y. Fang^*, P. W. Huang, M. S. Tsai, B. T. Dai, Yew-Chuhg Wu, M. S. Feng

^*此作品的通信作者

材料科學與工程學系

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

Pattern effect, a critical issue in metal planarization, results from different pattern designs bringing a variation of effective local pressure. In order to optimize the pattern effect in Cu planarization, Cu removal should be pressure independent. Recently, it was found that Cu abrasive-free polishing (AFP) technology could benefit pressure-independent Cu removal for Cu planarization by controlling the down force. In this study, by using 5-methyl-1H-benzotriazole as a corrosion inhibitor, pressure-independent Cu removal with AFP slurries can be achieved below a 3 psi down force. Thus, the pattern effect in Cu planarization can be optimized with AFP slurries by low down force.

原文	English
期刊	Electrochemical and Solid-State Letters
卷	9
發行號	1
DOIs	https://doi.org/10.1149/1.2137469
出版狀態	Published - 10 4月 2006

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AU - Fang, J. Y.

AU - Huang, P. W.

AU - Tsai, M. S.

AU - Dai, B. T.

AU - Wu, Yew-Chuhg

AU - Feng, M. S.

PY - 2006/4/10

Y1 - 2006/4/10

N2 - Pattern effect, a critical issue in metal planarization, results from different pattern designs bringing a variation of effective local pressure. In order to optimize the pattern effect in Cu planarization, Cu removal should be pressure independent. Recently, it was found that Cu abrasive-free polishing (AFP) technology could benefit pressure-independent Cu removal for Cu planarization by controlling the down force. In this study, by using 5-methyl-1H-benzotriazole as a corrosion inhibitor, pressure-independent Cu removal with AFP slurries can be achieved below a 3 psi down force. Thus, the pattern effect in Cu planarization can be optimized with AFP slurries by low down force.

AB - Pattern effect, a critical issue in metal planarization, results from different pattern designs bringing a variation of effective local pressure. In order to optimize the pattern effect in Cu planarization, Cu removal should be pressure independent. Recently, it was found that Cu abrasive-free polishing (AFP) technology could benefit pressure-independent Cu removal for Cu planarization by controlling the down force. In this study, by using 5-methyl-1H-benzotriazole as a corrosion inhibitor, pressure-independent Cu removal with AFP slurries can be achieved below a 3 psi down force. Thus, the pattern effect in Cu planarization can be optimized with AFP slurries by low down force.

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

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Study on pressure-independent Cu removal in Cu abrasive-free polishing

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