Study on oxygen-dependent instability of amorphous In-Ga-Zn-O TFT and completely stable device under both positive and negative bias stresses

Wei Tsung Chen; Hsiao-Wen Zan; Shih Yi Lo; Shih Chin Kao; Chuang Chuang Tsai; Jian Hong Lin; Chun Hsiang Fang; Chung Chun Lee

Study on oxygen-dependent instability of amorphous In-Ga-Zn-O TFT and completely stable device under both positive and negative bias stresses

Wei Tsung Chen^*, Hsiao-Wen Zan, Shih Yi Lo, Shih Chin Kao, Chuang Chuang Tsai, Jian Hong Lin, Chun Hsiang Fang, Chung Chun Lee

^*此作品的通信作者

光電工程學系

研究成果: Paper › 同行評審

摘要

A complete experiment is conducted to verify the origin of stress-induced instability in an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). It is found that the oxygen ratio in an IGZO layer strongly influences the device stability under bias stress. For realizing an adequately stable device, post-annealing and passivation are performed in order.

原文	English
頁面	763-765
頁數	3
出版狀態	Published - 1 12月 2010
事件	17th International Display Workshops, IDW'10 - Fukuoka, 日本持續時間: 1 12月 2010 → 3 12月 2010

Conference

Conference	17th International Display Workshops, IDW'10
國家/地區	日本
城市	Fukuoka
期間	1/12/10 → 3/12/10

其它文件與鏈接

Link to publication in Scopus

引用此

@conference{9263cd6f12be4e9992ad415732c561ac,

title = "Study on oxygen-dependent instability of amorphous In-Ga-Zn-O TFT and completely stable device under both positive and negative bias stresses",

abstract = "A complete experiment is conducted to verify the origin of stress-induced instability in an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). It is found that the oxygen ratio in an IGZO layer strongly influences the device stability under bias stress. For realizing an adequately stable device, post-annealing and passivation are performed in order.",

author = "Chen, {Wei Tsung} and Hsiao-Wen Zan and Lo, {Shih Yi} and Kao, {Shih Chin} and Tsai, {Chuang Chuang} and Lin, {Jian Hong} and Fang, {Chun Hsiang} and Lee, {Chung Chun}",

year = "2010",

month = dec,

day = "1",

language = "English",

pages = "763--765",

note = "17th International Display Workshops, IDW'10 ; Conference date: 01-12-2010 Through 03-12-2010",

}

TY - CONF

T1 - Study on oxygen-dependent instability of amorphous In-Ga-Zn-O TFT and completely stable device under both positive and negative bias stresses

AU - Chen, Wei Tsung

AU - Zan, Hsiao-Wen

AU - Lo, Shih Yi

AU - Kao, Shih Chin

AU - Tsai, Chuang Chuang

AU - Lin, Jian Hong

AU - Fang, Chun Hsiang

AU - Lee, Chung Chun

PY - 2010/12/1

Y1 - 2010/12/1

N2 - A complete experiment is conducted to verify the origin of stress-induced instability in an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). It is found that the oxygen ratio in an IGZO layer strongly influences the device stability under bias stress. For realizing an adequately stable device, post-annealing and passivation are performed in order.

AB - A complete experiment is conducted to verify the origin of stress-induced instability in an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). It is found that the oxygen ratio in an IGZO layer strongly influences the device stability under bias stress. For realizing an adequately stable device, post-annealing and passivation are performed in order.

UR - http://www.scopus.com/inward/record.url?scp=79956299037&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:79956299037

SP - 763

EP - 765

T2 - 17th International Display Workshops, IDW'10

Y2 - 1 December 2010 through 3 December 2010

ER -

Study on oxygen-dependent instability of amorphous In-Ga-Zn-O TFT and completely stable device under both positive and negative bias stresses

摘要

Conference

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