Study on oxygen-dependent instability of amorphous In-Ga-Zn-O TFT and completely stable device under both positive and negative bias stresses

Wei Tsung Chen*, Hsiao-Wen Zan, Shih Yi Lo, Shih Chin Kao, Chuang Chuang Tsai, Jian Hong Lin, Chun Hsiang Fang, Chung Chun Lee

*此作品的通信作者

研究成果: Paper同行評審

摘要

A complete experiment is conducted to verify the origin of stress-induced instability in an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). It is found that the oxygen ratio in an IGZO layer strongly influences the device stability under bias stress. For realizing an adequately stable device, post-annealing and passivation are performed in order.

原文English
頁面763-765
頁數3
出版狀態Published - 1 12月 2010
事件17th International Display Workshops, IDW'10 - Fukuoka, Japan
持續時間: 1 12月 20103 12月 2010

Conference

Conference17th International Display Workshops, IDW'10
國家/地區Japan
城市Fukuoka
期間1/12/103/12/10

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