Study on Optoelectronic Characteristics of ZnGa₂O₄Thin-Film Phototransistors

Keyphrases

• Current Ratio 33%
• Dark Current 33%
• Deep Ultraviolet 66%
• Device Application 33%
• Electro-optical Characteristics 100%
• Gate Control 33%
• High Photoresponsivity 33%
• Incident Light 33%
• Metal-organic Chemical Vapor Deposition (MOCVD) 33%
• Optical Response 33%
• Photocurrent 33%
• Photocurrent Response 33%
• Photodetector 33%
• Phototransistor 100%
• Responsivity 33%
• Rise Time 33%
• Threshold Voltage Shift 33%
• Transistor 33%
• Ultraviolet Optoelectronics 33%
• Ultraviolet Phototransistors 33%
• ZnGa2O4 100%

Engineering

• Control Gate 25%
• Current Ratio 25%
• Light Incident 25%
• Metal Organic Chemical Vapor Deposition 25%
• Optoelectronic Device 25%
• Optoelectronics 100%
• Photocurrent 50%
• Photodetector 25%
• Phototransistor 100%
• Promising Candidate 25%
• Responsivity 25%

Material Science

• Metal-Organic Chemical Vapor Deposition 100%
• Transistor 100%