Study on Optoelectronic Characteristics of ZnGa2O4Thin-Film Phototransistors

Yuan Chu Shen, Chun Yi Tung, Chiung Yi Huang, Yu Chang Lin, Yan Gu Lin, Ray Hua Horng*

*此作品的通信作者

研究成果: Article同行評審

28 引文 斯高帕斯(Scopus)

摘要

Deep ultraviolet (DUV) phototransistors with high photoresponsivity are fabricated on ZnGa2O4 grown by metal-organic chemical-vapor deposition. Owing to transistor actions, the photodetector meets to a large photocurrent and optical response. When illuminated with photon wavelength within the range of 200-250 nm, the ZnGa2O4-based phototransistor presented a large responsivity, especially 1.51 × 106 A/W as the incident light at 210 nm with 1.73 μW/cm2. It was also observed that the photocurrent/dark current ratio and rising time can be improved by gate control, which is related to threshold voltage shifting when under illumination. These results demonstrate ZnGa2O4-based phototransistor is a very promising candidate for DUV optoelectronic devices applications.

原文English
頁(從 - 到)783-788
頁數6
期刊ACS Applied Electronic Materials
1
發行號5
DOIs
出版狀態Published - 28 5月 2019

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