TY - JOUR
T1 - Study on cdm esd robustness among on-chip decoupling capacitors in cmos integrated circuits
AU - Huang, Yi Chun
AU - Ker, Ming Dou
N1 - Publisher Copyright:
© 2013 IEEE.
PY - 2021
Y1 - 2021
N2 - The integrated circuit (IC) products fabricated in the scaled-down CMOS processes with higher clock rate and lower power supply voltage (VDD) are more sensitive to the transient/switching noises on the power lines with the parasitic inductance induced by the bonding wire. The typical method to suppress the power line noise is to add on-chip decoupling capacitors. Meanwhile, electrostatic discharge (ESD) is also a challenging issue on IC reliability in advanced CMOS technology. For the ICs fabricated in an advanced process, with the thinner gate oxide, the circuits are particularly vulnerable to the charged-device model (CDM) ESD events. However, there was very limited research to investigate the ESD robustness on the decoupling capacitors, especially during the CDM ESD events. In this work, the CDM ESD robustness among different types of decoupling capacitors in ICs was investigated in a 0.18μ m CMOS technology.
AB - The integrated circuit (IC) products fabricated in the scaled-down CMOS processes with higher clock rate and lower power supply voltage (VDD) are more sensitive to the transient/switching noises on the power lines with the parasitic inductance induced by the bonding wire. The typical method to suppress the power line noise is to add on-chip decoupling capacitors. Meanwhile, electrostatic discharge (ESD) is also a challenging issue on IC reliability in advanced CMOS technology. For the ICs fabricated in an advanced process, with the thinner gate oxide, the circuits are particularly vulnerable to the charged-device model (CDM) ESD events. However, there was very limited research to investigate the ESD robustness on the decoupling capacitors, especially during the CDM ESD events. In this work, the CDM ESD robustness among different types of decoupling capacitors in ICs was investigated in a 0.18μ m CMOS technology.
KW - Charged-device model (CDM)
KW - Decoupling capacitor
KW - Electrostatic discharge (ESD)
KW - Parasitic inductance
KW - Power line noise
KW - Transient/switching noise
UR - http://www.scopus.com/inward/record.url?scp=85121477633&partnerID=8YFLogxK
U2 - 10.1109/JEDS.2021.3116961
DO - 10.1109/JEDS.2021.3116961
M3 - Article
AN - SCOPUS:85121477633
SN - 2168-6734
VL - 9
SP - 881
EP - 890
JO - IEEE Journal of the Electron Devices Society
JF - IEEE Journal of the Electron Devices Society
ER -