Study of tri-gate AlGaN/GaN MOS-HEMTs for power application

Kuan Ning Huang; Yueh Chin Lin; Jin Hwa Lee; Chia Chieh Hsu; Jing Neng Yao; Chieh Ying Wu; Chao Hsin Chien; Edward Yi Chang

doi:10.1016/j.mne.2020.100073

Study of tri-gate AlGaN/GaN MOS-HEMTs for power application

Kuan Ning Huang^*, Yueh Chin Lin, Jin Hwa Lee, Chia Chieh Hsu, Jing Neng Yao, Chieh Ying Wu, Chao Hsin Chien, Edward Yi Chang

^*此作品的通信作者

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

摘要

In this letter, we present high-performance AlGaN/GaN high electron mobility transistor (HEMT) by 3-dimensional (3D) tri-gate. Due to the excellent channel control of tri-gate structure, the tri-gate HEMT shows the low subthreshold swing (SS) of 65 mV/decade, low off-state drain leakage current (I_off) of 7 nA/mm, and On/Off ratio up to 7.6 × 10⁷. Furthermore, we combined the tri-gate structure and metal oxide semiconductor (MOS) structure. The tri-gate MOS-HEMT with high-k dielectric oxide HfO₂ was fabricated. The good interface between HfO₂ and AlGaN and strain-induce polarization increase the carrier concentration. Compared to the tri-gate HEMT, the increased maximum drain current, higher On/Off ratio and better breakdown voltage is demonstrated by implanted the high k dielectric HfO₂. The improved electrical performance of tri-gate MOS-HEMT shows potential for next generation power application.

原文	English
文章編號	100073
期刊	Micro and Nano Engineering
卷	9
DOIs	https://doi.org/10.1016/j.mne.2020.100073
出版狀態	Published - 11月 2020

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@article{1c7af3e2bb0c478ebeea9e967ad11323,

title = "Study of tri-gate AlGaN/GaN MOS-HEMTs for power application",

abstract = "In this letter, we present high-performance AlGaN/GaN high electron mobility transistor (HEMT) by 3-dimensional (3D) tri-gate. Due to the excellent channel control of tri-gate structure, the tri-gate HEMT shows the low subthreshold swing (SS) of 65 mV/decade, low off-state drain leakage current (Ioff) of 7 nA/mm, and On/Off ratio up to 7.6 × 107. Furthermore, we combined the tri-gate structure and metal oxide semiconductor (MOS) structure. The tri-gate MOS-HEMT with high-k dielectric oxide HfO2 was fabricated. The good interface between HfO2 and AlGaN and strain-induce polarization increase the carrier concentration. Compared to the tri-gate HEMT, the increased maximum drain current, higher On/Off ratio and better breakdown voltage is demonstrated by implanted the high k dielectric HfO2. The improved electrical performance of tri-gate MOS-HEMT shows potential for next generation power application.",

keywords = "AlGaN/GaN HEMT, HfO, High-k dielectric oxide, Subthreshold swing, Tri-gate MOS-HEMT, Tri-gate structure",

author = "Huang, {Kuan Ning} and Lin, {Yueh Chin} and Lee, {Jin Hwa} and Hsu, {Chia Chieh} and Yao, {Jing Neng} and Wu, {Chieh Ying} and Chien, {Chao Hsin} and Chang, {Edward Yi}",

year = "2020",

month = nov,

doi = "10.1016/j.mne.2020.100073",

language = "English",

volume = "9",

journal = "Micro and Nano Engineering",

issn = "2590-0072",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Study of tri-gate AlGaN/GaN MOS-HEMTs for power application

AU - Huang, Kuan Ning

AU - Lin, Yueh Chin

AU - Lee, Jin Hwa

AU - Hsu, Chia Chieh

AU - Yao, Jing Neng

AU - Wu, Chieh Ying

AU - Chien, Chao Hsin

AU - Chang, Edward Yi

PY - 2020/11

Y1 - 2020/11

N2 - In this letter, we present high-performance AlGaN/GaN high electron mobility transistor (HEMT) by 3-dimensional (3D) tri-gate. Due to the excellent channel control of tri-gate structure, the tri-gate HEMT shows the low subthreshold swing (SS) of 65 mV/decade, low off-state drain leakage current (Ioff) of 7 nA/mm, and On/Off ratio up to 7.6 × 107. Furthermore, we combined the tri-gate structure and metal oxide semiconductor (MOS) structure. The tri-gate MOS-HEMT with high-k dielectric oxide HfO2 was fabricated. The good interface between HfO2 and AlGaN and strain-induce polarization increase the carrier concentration. Compared to the tri-gate HEMT, the increased maximum drain current, higher On/Off ratio and better breakdown voltage is demonstrated by implanted the high k dielectric HfO2. The improved electrical performance of tri-gate MOS-HEMT shows potential for next generation power application.

AB - In this letter, we present high-performance AlGaN/GaN high electron mobility transistor (HEMT) by 3-dimensional (3D) tri-gate. Due to the excellent channel control of tri-gate structure, the tri-gate HEMT shows the low subthreshold swing (SS) of 65 mV/decade, low off-state drain leakage current (Ioff) of 7 nA/mm, and On/Off ratio up to 7.6 × 107. Furthermore, we combined the tri-gate structure and metal oxide semiconductor (MOS) structure. The tri-gate MOS-HEMT with high-k dielectric oxide HfO2 was fabricated. The good interface between HfO2 and AlGaN and strain-induce polarization increase the carrier concentration. Compared to the tri-gate HEMT, the increased maximum drain current, higher On/Off ratio and better breakdown voltage is demonstrated by implanted the high k dielectric HfO2. The improved electrical performance of tri-gate MOS-HEMT shows potential for next generation power application.

KW - AlGaN/GaN HEMT

KW - HfO

KW - High-k dielectric oxide

KW - Subthreshold swing

KW - Tri-gate MOS-HEMT

KW - Tri-gate structure

UR - http://www.scopus.com/inward/record.url?scp=85092403743&partnerID=8YFLogxK

U2 - 10.1016/j.mne.2020.100073

DO - 10.1016/j.mne.2020.100073

M3 - Article

AN - SCOPUS:85092403743

SN - 2590-0072

VL - 9

JO - Micro and Nano Engineering

JF - Micro and Nano Engineering

M1 - 100073

ER -

Study of tri-gate AlGaN/GaN MOS-HEMTs for power application

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