Study of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTs

Y. C. Lin, M. W. Lee, M. Y. Tsai, C. Wang, J. N. Yao, T. J. Huang, Heng-Tung Hsu, J. S. Maa, Edward Yi Chang*

*此作品的通信作者

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this study, the thick copper metallization with WNx as diffusion barrier is investigated for AlGaN/GaN HEMTs. The device current density, transconductance, ft, fmax, noise Figure were evaluated for the device with and without thick copper interconnect metal, and the thermal stability test was performed after the device with copper metallization.

原文English
主出版物標題EuMIC 2019 - 2019 14th European Microwave Integrated Circuits Conference
發行者Institute of Electrical and Electronics Engineers Inc.
頁面68-71
頁數4
ISBN(電子)9782874870569
DOIs
出版狀態Published - 9月 2019
事件14th European Microwave Integrated Circuits Conference, EuMIC 2019 - Paris, France
持續時間: 30 9月 20191 10月 2019

出版系列

名字EuMIC 2019 - 2019 14th European Microwave Integrated Circuits Conference

Conference

Conference14th European Microwave Integrated Circuits Conference, EuMIC 2019
國家/地區France
城市Paris
期間30/09/191/10/19

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