@inproceedings{f71ba1a5ac964fb2bf7e9de25f3f046b,
title = "Study of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTs",
abstract = "In this study, the thick copper metallization with WNx as diffusion barrier is investigated for AlGaN/GaN HEMTs. The device current density, transconductance, ft, fmax, noise Figure were evaluated for the device with and without thick copper interconnect metal, and the thermal stability test was performed after the device with copper metallization.",
keywords = "AlGaN/GaN HEMT, copper metallization, interconnect metal, low noise figure, thermal stability",
author = "Lin, {Y. C.} and Lee, {M. W.} and Tsai, {M. Y.} and C. Wang and Yao, {J. N.} and Huang, {T. J.} and Heng-Tung Hsu and Maa, {J. S.} and Chang, {Edward Yi}",
year = "2019",
month = sep,
doi = "10.23919/EuMIC.2019.8909414",
language = "English",
series = "EuMIC 2019 - 2019 14th European Microwave Integrated Circuits Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "68--71",
booktitle = "EuMIC 2019 - 2019 14th European Microwave Integrated Circuits Conference",
address = "美國",
note = "14th European Microwave Integrated Circuits Conference, EuMIC 2019 ; Conference date: 30-09-2019 Through 01-10-2019",
}