InAs HEMTs with a mesa etch structure that connects the Schottky gate through mesa sidewall with InAlAs layers were fabricated. The gate metal connection to the InAlAs layers increases the positive potential of the channel region through the gate bias, resulting in a steep SS due to a positive potential feedback. The mesa etch InAs HEMT shows an excellent performance with an extremely low minimum SS value of 46 mV/decade with the high G m, max /SS of 33 and a high Ion/Ioff ratio of 6.6×104 at Vds = 1V.
|出版狀態||Published - 29 5月 2018|
|事件||2018 China Semiconductor Technology International Conference, CSTIC 2018 - Shanghai, China|
持續時間: 11 3月 2018 → 12 3月 2018
|Conference||2018 China Semiconductor Technology International Conference, CSTIC 2018|
|期間||11/03/18 → 12/03/18|