Study of the atomic models of three donor-like traps on oxidized silicon with aluminum gate from their processing dependences

Chih Tang Sah*, Jack Yuan Chen Sun, Joseph Jeng Tao Tzou

*此作品的通信作者

研究成果: Article同行評審

76 引文 斯高帕斯(Scopus)

摘要

The effects of processing on the generation of three donor-like traps, i.e., the bulk compensating donor, the donor-like turn-around trap, and the peaked interface donor in boron doped p-Si aluminum-gate metal-oxide- semiconductor capacitors, are reported. After a possible initial delay, the generation of the bulk compensating donor follows first-order kinetics with a final density always approaching the initial boron concentration over the present experimental range 2.5×1016-1. 5×1017 boron/cm3. The initial delay and the generation cross section of the bulk compensating donor and the generation cross sections and the densities of the turn-around and peaked interface donors are process dependent. Experimental evidence indicates that the three traps are water related. The close correlation of their generation-annealing kinetics suggests that they may be from the same water-related mobile impurity species, such as atomic hydrogen, released by the avalanche injected hot electrons. The generation kinetics of the three donors could involve (i) bond breaking and release of some water-related species, such as atomic hydrogen, at the Al-SiO2 interface or in the oxide, (ii) transport of the species through the oxide, (iii) modification of the peaked interface donor and the donor-like turn-around trap when the species reached the oxide-silicon interface, and (iv) formation of the bulk compensating donor when the species penetrate the silicon surface space charge layer.

原文English
頁(從 - 到)5864-5879
頁數16
期刊Journal of Applied Physics
54
發行號10
DOIs
出版狀態Published - 1983

指紋

深入研究「Study of the atomic models of three donor-like traps on oxidized silicon with aluminum gate from their processing dependences」主題。共同形成了獨特的指紋。

引用此