Study of Schottky barriers on n-type GaN grown by LP-MOCVD

J. D. Guo*, M. S. Feng, Fu-Ming Pan

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研究成果: Paper同行評審

摘要

The Schottky barrier height of metals (Pt, Pd, Au, Ni, and Ti) on n-GaN has been measured by C-V and J-T methods. Comparison of the Schottky characteristics of those metals are discussed. Ni on GaN dose not follow the rule of S=1 for GaN. The metal work function of Ni is high but the Schottky barrier height is low. The metal work function of Ag is about 4.26 eV, but the Schottky barrier height is about 1.2 eV. We think that it is because of the interactions between the metal and the semiconductor dominate the Schottky behavior.

原文English
頁面515-517
頁數3
出版狀態Published - 1 十二月 1995
事件Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China
持續時間: 24 十月 199528 十月 1995

Conference

ConferenceProceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology
城市Beijing, China
期間24/10/9528/10/95

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