Study of nonpolar GaN/ZnO heterostructures grown by molecular beam epitaxy

Chiao Yun Chang, Huei Min Huang, Yu-Pin Lan, Tien-chang Lu*, Li Wei Tu, Wen Feng Hsieh

*此作品的通信作者

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

The growth mechanism and characteristics of the nonpolar GaN/ZnO heterostructure grown on the r-plane sapphire substrate by using molecular beam epitaxy were studied. The crystal interaction between GaN and ZnO epitaxial layers was clarified by using transmission electron microscopy and X-ray diffraction. A new epitaxial relationship of ZnGa2O4 (220)//GaN (101Ì...3Ì...) in the normal surface direction was obtained in the GaN/ZnO heterostructure. It was believed that the formation of ZnGa2O4 (220) was due to the recrystallization of the ZnO layer with Ga atoms, which in turn resulted in the formation of semipolar-oriented GaN. In addition, the main optical transition in the GaN/ZnO heterostructure was attributed to the existence of the interface states and new ZnO:(Ga,N) alloys.

原文English
頁(從 - 到)3098-3102
頁數5
期刊Crystal Growth and Design
13
發行號7
DOIs
出版狀態Published - 3 7月 2013

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