Study of Low Noise with High Linearity AlGaN/GaN HEMTs by Optimizing Γ-Gate Structure for Ka-Band Applications

Che Wei Hsu*, Yueh Chin Lin, Che Han Yang, Edward Yi Chang*

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

This paper investigates the device noise and linearity of an AlGaN/GaN HEMT with an optimized Γ-Gate structure for Ka-band applications. The Γ-Gate was used to provide low gate resistance for the device by increasing the gate cross-section and acting as a gate field plate to achieve a flat transconductance (Gm) profile. The device’s Gm profile was analyzed under different gate positions, including at the center or close to the source. Under different bias conditions, we performed the optimization of the Γ-gate head length (Lhead). The results show that an excellent minimum noise figure (NFmin) for the device can be achieved when the Γ-gate is positioned close to the source with an optimum Lhead. Finally, the NFmin improved from 1.9 dB to 1.59 dB and the third-order intercept point (OIP3) value improved from 27.7 dBm to 31.1 dBm when the source-drain distance (LSD) was reduced from 2.5 μ m to 2 μ m . It was demonstrated that the optimized Γ-Gate design has the potential to attain the device with low noise and high linearity.

原文English
文章編號075005
期刊ECS Journal of Solid State Science and Technology
12
發行號7
DOIs
出版狀態Published - 7月 2023

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