Study of hydrogenated amorphous silicon films prepared at intermediate frequencies

Keyphrases

• Intermediate Frequency 100%
• Photoconductivity 100%
• Hydrogenated Amorphous Silicon Films 100%
• Hydrogen Content 50%
• Light-induced Degradation 50%
• Ultra-high Frequency 50%
• Spectroscopy Studies 25%
• Annealing 25%
• Fourier Transform Infrared Spectroscopy (FT-IR) 25%
• X-ray Photoelectron Spectroscopy 25%
• Growth Mechanism 25%
• Deposition Rate 25%
• Short-circuit Current Density 25%
• Band Gap 25%
• Emissive 25%
• Dianhydride 25%
• Dark Conductivity 25%
• Amorphous Silicon Thin Film 25%
• Possible Mechanisms 25%
• High Deposition Rate 25%
• Atomic Hydrogen 25%
• Diagnostic Tool 25%
• Degradation Study 25%
• Optical Emission Spectroscopy 25%
• Defect Creation 25%
• Relative Abundance 25%
• Hydrogen Bonding Configuration 25%
• Preferred Growth 25%
• Radiofrequency 25%
• Temperature Regime 25%
• High Substrate Temperature 25%
• High-frequency Conditions 25%
• Plasma Diagnostics 25%

Physics

• Silicon Films 100%
• Amorphous Silicon 100%
• Photoconductivity 100%
• Hydrogen 75%
• X Ray Spectroscopy 25%
• Energy Gaps (Solid State) 25%
• FTIR Spectroscopy 25%
• Optical Emission Spectroscopy 25%
• Plasma Diagnostics 25%
• X Ray Photoemission Spectroscopy 25%
• Conductance 25%
• Diagnosis 25%
• Atomic Hydrogen 25%
• Dihydrides 25%

Material Science

• Film 100%
• Amorphous Silicon 100%
• Photoconductivity 66%
• Hydrogen 50%
• Density 16%
• Hydrogen Bonding 16%
• X-Ray Photoelectron Spectroscopy 16%
• Electronic Circuit 16%
• Fourier Transform Infrared Spectroscopy 16%
• Emission Spectroscopy 16%