Study of hydrogenated amorphous silicon films prepared at intermediate frequencies

Keyphrases

• Intermediate Frequency 100%
• Photoconductivity 100%
• Hydrogenated Amorphous Silicon Films 100%
• Hydrogen Content 50%
• Light-induced Degradation 50%
• Ultra-high Frequency 50%
• Spectroscopy Studies 25%
• Annealing 25%
• Fourier Transform Infrared Spectroscopy (FT-IR) 25%
• X-ray Photoelectron Spectroscopy 25%
• Radio Frequency 25%
• Growth Mechanism 25%
• Deposition Rate 25%
• Short-circuit Current Density 25%
• Band Gap 25%
• Emissive 25%
• Dianhydride 25%
• Dark Conductivity 25%
• Amorphous Silicon Thin Film 25%
• Possible Mechanisms 25%
• High Deposition Rate 25%
• Atomic Hydrogen 25%
• Temperature Regime 25%
• Diagnostic Tool 25%
• High Substrate Temperature 25%
• Degradation Study 25%
• Optical Emission Spectroscopy 25%
• Defect Creation 25%
• Relative Abundance 25%
• Hydrogen Bonding Configuration 25%
• Preferred Growth 25%
• Plasma Diagnostics 25%

Engineering

• Intermediate Frequency 100%
• Hydrogenated Amorphous Silicon 100%
• Induced Degradation 100%
• Ray Photoelectron Spectroscopy 50%
• Radio Frequency 50%
• Growth Mechanism 50%
• Short-Circuit Current Density 50%
• Substrate Temperature 50%
• Deposition Rate 50%
• Film Silicon 50%
• High Deposition Rate 50%
• Bonding Configuration 50%
• Atomic Hydrogen 50%
• Frequency Condition 50%
• Plasma Diagnostics 50%
• Band Gap 50%
• Light Emission 50%
• FTIR Spectroscopy 50%

Material Science

• Film 100%
• Amorphous Silicon 100%
• Photoconductivity 66%
• Density 16%
• Hydrogen Bonding 16%
• X-Ray Photoelectron Spectroscopy 16%
• Electronic Circuit 16%
• Fourier Transform Infrared Spectroscopy 16%
• Emission Spectroscopy 16%
• Surface (Surface Science) 16%