Study of hole concentration of 1,4-bis[N-(1-naphthyl)-N′-phenylamino] -4,4′ diamine doped with tungsten oxide by admittance spectroscopy

Ming Ta Hsieh; Chan Ching Chang; Jenn-Fang Chen; Chin H. Chen

doi:10.1063/1.2345610

Study of hole concentration of 1,4-bis[N-(1-naphthyl)-N′-phenylamino] -4,4′ diamine doped with tungsten oxide by admittance spectroscopy

Ming Ta Hsieh^*, Chan Ching Chang, Jenn-Fang Chen, Chin H. Chen

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電子物理學系

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48 引文斯高帕斯（Scopus）

摘要

The effect of tungsten oxide (WO₃) incorporation into 1,4-bis[N-(1-naphthyl)-N′-phenylamino]-4,4′ diamine (NPB) layer is investigated in NPB-tris(8-hydroxyquinoline)aluminium heterojunction organic light-emitting diodes. The admittance spectroscopy studies show that increasing the WO₃ volume percentage from 0% to 16% can increase the hole concentration of the NBP layer from 1.97 × 10¹⁴ to 1.90 × 10¹⁷ cm^-3 and decrease the activation energy of the resistance of the NPB layer from 0.354 to 0.176 eV. Thus, this incorporation reduces the Ohmic loss and increases the band bending in the NBP layer near the interface, resulting in an improved hole injection via tunneling through a narrow depletion region.

原文	English
文章編號	103510
期刊	Applied Physics Letters
卷	89
發行號	10
DOIs	https://doi.org/10.1063/1.2345610
出版狀態	Published - 18 9月 2006

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abstract = "The effect of tungsten oxide (WO3) incorporation into 1,4-bis[N-(1-naphthyl)-N′-phenylamino]-4,4′ diamine (NPB) layer is investigated in NPB-tris(8-hydroxyquinoline)aluminium heterojunction organic light-emitting diodes. The admittance spectroscopy studies show that increasing the WO3 volume percentage from 0% to 16% can increase the hole concentration of the NBP layer from 1.97 × 1014 to 1.90 × 1017 cm-3 and decrease the activation energy of the resistance of the NPB layer from 0.354 to 0.176 eV. Thus, this incorporation reduces the Ohmic loss and increases the band bending in the NBP layer near the interface, resulting in an improved hole injection via tunneling through a narrow depletion region.",

author = "Hsieh, {Ming Ta} and Chang, {Chan Ching} and Jenn-Fang Chen and Chen, {Chin H.}",

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AU - Chen, Jenn-Fang

AU - Chen, Chin H.

PY - 2006/9/18

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AB - The effect of tungsten oxide (WO3) incorporation into 1,4-bis[N-(1-naphthyl)-N′-phenylamino]-4,4′ diamine (NPB) layer is investigated in NPB-tris(8-hydroxyquinoline)aluminium heterojunction organic light-emitting diodes. The admittance spectroscopy studies show that increasing the WO3 volume percentage from 0% to 16% can increase the hole concentration of the NBP layer from 1.97 × 1014 to 1.90 × 1017 cm-3 and decrease the activation energy of the resistance of the NPB layer from 0.354 to 0.176 eV. Thus, this incorporation reduces the Ohmic loss and increases the band bending in the NBP layer near the interface, resulting in an improved hole injection via tunneling through a narrow depletion region.

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Study of hole concentration of 1,4-bis[N-(1-naphthyl)-N′-phenylamino] -4,4′ diamine doped with tungsten oxide by admittance spectroscopy

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