Study of high-ge-content Si0.16Ge0.84 gate stack by low pressure oxidation

Wei Li Lee, Jun Lin Zhang, Ming Li Tsai, Shin Yuan Wang, Guang Li Luo, Chao Hsin Chien*

*此作品的通信作者

研究成果: Article同行評審

指紋

深入研究「Study of high-ge-content Si0.16Ge0.84 gate stack by low pressure oxidation」主題。共同形成了獨特的指紋。

Chemical Compounds

Engineering & Materials Science