Study of high-ge-content Si0.16Ge0.84 gate stack by low pressure oxidation

Wei Li Lee; Jun Lin Zhang; Ming Li Tsai; Shin Yuan Wang; Guang Li Luo; Chao Hsin Chien

doi:10.1149/2.0181802jss

Study of high-ge-content Si0.16Ge0.84 gate stack by low pressure oxidation

Wei Li Lee, Jun Lin Zhang, Ming Li Tsai, Shin Yuan Wang, Guang Li Luo, Chao Hsin Chien^*

^*此作品的通信作者

研究成果: Article › 同行評審

摘要

In this study, we employed low-pressure oxidation (LPO) to achieve a high-quality dielectric gate stack on high-Ge-content (HGC) Si₀ ₁₆Ge_0.84. According to X-ray photoelectron spectroscopy depth-profiling results, lowering the oxidation pressure can drive out-diffusion of Si atoms from the HGC SiGe surface, resulting in the suppression of GeOx formation. A nearly GeOx-free interfacial layer detected at anO2 pressure of 0.01 torr at 600°Cwas used.Consequently, the formation of stable SiOx resulted in the improvement of Dit and gate leakage current, which in accumulation (VFB-1V) was also considerably reduced with an equivalent oxide thickness of 1.5 nm. Finally, by applying the LPO process and optimized process conditions, the interface trap density (Dit) was reduced to 2 × 10¹² eV^-1cm^-2

原文	English
頁（從 - 到）	P73-P76
期刊	ECS Journal of Solid State Science and Technology
卷	7
發行號	2
DOIs	https://doi.org/10.1149/2.0181802jss
出版狀態	Published - 1月 2018

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title = "Study of high-ge-content Si0.16Ge0.84 gate stack by low pressure oxidation",

abstract = "In this study, we employed low-pressure oxidation (LPO) to achieve a high-quality dielectric gate stack on high-Ge-content (HGC) Si0 16Ge0.84. According to X-ray photoelectron spectroscopy depth-profiling results, lowering the oxidation pressure can drive out-diffusion of Si atoms from the HGC SiGe surface, resulting in the suppression of GeOx formation. A nearly GeOx-free interfacial layer detected at anO2 pressure of 0.01 torr at 600°Cwas used.Consequently, the formation of stable SiOx resulted in the improvement of Dit and gate leakage current, which in accumulation (VFB-1V) was also considerably reduced with an equivalent oxide thickness of 1.5 nm. Finally, by applying the LPO process and optimized process conditions, the interface trap density (Dit) was reduced to 2 × 1012 eV-1cm-2 ",

author = "Lee, {Wei Li} and Zhang, {Jun Lin} and Tsai, {Ming Li} and Wang, {Shin Yuan} and Luo, {Guang Li} and Chien, {Chao Hsin}",

year = "2018",

month = jan,

doi = "10.1149/2.0181802jss",

language = "English",

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pages = "P73--P76",

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publisher = "Electrochemical Society, Inc.",

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T1 - Study of high-ge-content Si0.16Ge0.84 gate stack by low pressure oxidation

AU - Lee, Wei Li

AU - Zhang, Jun Lin

AU - Tsai, Ming Li

AU - Wang, Shin Yuan

AU - Luo, Guang Li

AU - Chien, Chao Hsin

PY - 2018/1

Y1 - 2018/1

N2 - In this study, we employed low-pressure oxidation (LPO) to achieve a high-quality dielectric gate stack on high-Ge-content (HGC) Si0 16Ge0.84. According to X-ray photoelectron spectroscopy depth-profiling results, lowering the oxidation pressure can drive out-diffusion of Si atoms from the HGC SiGe surface, resulting in the suppression of GeOx formation. A nearly GeOx-free interfacial layer detected at anO2 pressure of 0.01 torr at 600°Cwas used.Consequently, the formation of stable SiOx resulted in the improvement of Dit and gate leakage current, which in accumulation (VFB-1V) was also considerably reduced with an equivalent oxide thickness of 1.5 nm. Finally, by applying the LPO process and optimized process conditions, the interface trap density (Dit) was reduced to 2 × 1012 eV-1cm-2

AB - In this study, we employed low-pressure oxidation (LPO) to achieve a high-quality dielectric gate stack on high-Ge-content (HGC) Si0 16Ge0.84. According to X-ray photoelectron spectroscopy depth-profiling results, lowering the oxidation pressure can drive out-diffusion of Si atoms from the HGC SiGe surface, resulting in the suppression of GeOx formation. A nearly GeOx-free interfacial layer detected at anO2 pressure of 0.01 torr at 600°Cwas used.Consequently, the formation of stable SiOx resulted in the improvement of Dit and gate leakage current, which in accumulation (VFB-1V) was also considerably reduced with an equivalent oxide thickness of 1.5 nm. Finally, by applying the LPO process and optimized process conditions, the interface trap density (Dit) was reduced to 2 × 1012 eV-1cm-2

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U2 - 10.1149/2.0181802jss

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VL - 7

SP - P73-P76

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 2

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Study of high-ge-content Si0.16Ge0.84 gate stack by low pressure oxidation

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