Study of high-ge-content Si0.16Ge0.84 gate stack by low pressure oxidation

Wei Li Lee, Jun Lin Zhang, Ming Li Tsai, Shin Yuan Wang, Guang Li Luo, Chao Hsin Chien*

*此作品的通信作者

    研究成果: Article同行評審

    摘要

    In this study, we employed low-pressure oxidation (LPO) to achieve a high-quality dielectric gate stack on high-Ge-content (HGC) Si0 16Ge0.84. According to X-ray photoelectron spectroscopy depth-profiling results, lowering the oxidation pressure can drive out-diffusion of Si atoms from the HGC SiGe surface, resulting in the suppression of GeOx formation. A nearly GeOx-free interfacial layer detected at anO2 pressure of 0.01 torr at 600°Cwas used.Consequently, the formation of stable SiOx resulted in the improvement of Dit and gate leakage current, which in accumulation (VFB-1V) was also considerably reduced with an equivalent oxide thickness of 1.5 nm. Finally, by applying the LPO process and optimized process conditions, the interface trap density (Dit) was reduced to 2 × 1012 eV-1cm-2

    原文English
    頁(從 - 到)P73-P76
    期刊ECS Journal of Solid State Science and Technology
    7
    發行號2
    DOIs
    出版狀態Published - 一月 2018

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