Study of growth temperature effect on crystal structure transition for GaN films grown on GaAs by metalorganic vapor phase epitaxy

Keyphrases

• Correlation Length 100%
• Gallium Arsenide 100%
• GaN Films 100%
• Metal Organic Vapor Phase Epitaxy (MOVPE) 100%
• Structure Transition 100%
• Cubic GaN 100%
• Growth Temperature Effects 100%
• Semiconductors 50%
• Thermally Stable 50%
• X-ray Diffraction Measurement 50%
• AlGaAs 50%
• Growth Temperature 50%
• GaAs Substrate 50%
• Zinc Selenide 50%
• Raman Measurements 50%
• Crystalline Film 50%
• Spatial Correlation Model 50%
• Temperature-based Method 50%
• X-ray Raman Scattering 50%
• Phonon Transmission 50%

Engineering

• Gallium Arsenide 100%
• Growth Temperature 100%
• Correlation Length 100%
• Crystal Structure 100%
• Aluminium Gallium Arsenide 50%
• Ray Diffraction 50%
• Gaas Substrate 50%
• Spatial Correlation 50%
• Correlation Model 50%

Physics

• Metalorganic Vapor Phase Epitaxy 100%
• Crystal Structure 100%
• X Ray Diffraction 50%
• Phonon 50%