Study of germanium nanosheet channel with negative capacitance field-effect-transistor

Yu Ning Chen, Fu Ju Hou, Chun Jung Su, Yung Chun Wu

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

This work demonstrates the germanium nanosheet channel with negative capacitance in gate-all-around field-effect-transistor (Ge NS NC-GAAFET) to reduce the subthreshold slope (SS). The Ge NS NC-GAAFET device structure, fabrication, and electrical are analysis were studied. Moreover, the Ge NS NC-FET reveals high driving current, and high Ion/Ioff ratio (>106). The novel Ge NS NC-FET could suit for future low-power integrated circuit applications.

原文English
主出版物標題2019 Silicon Nanoelectronics Workshop, SNW 2019
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9784863487024
DOIs
出版狀態Published - 6月 2019
事件24th Silicon Nanoelectronics Workshop, SNW 2019 - Kyoto, Japan
持續時間: 9 6月 201910 6月 2019

出版系列

名字2019 Silicon Nanoelectronics Workshop, SNW 2019

Conference

Conference24th Silicon Nanoelectronics Workshop, SNW 2019
國家/地區Japan
城市Kyoto
期間9/06/1910/06/19

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