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Study of extending carrier lifetime in ZnTe quantum dots coupled with ZnCdSe quantum well
W. C. Fan
*
,
Wu-Ching Chou
, J. D. Lee, Ling Lee, Nguyen Dang Phu, Luc Huy Hoang
*
此作品的通信作者
電子物理學系
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引文 斯高帕斯(Scopus)
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Keyphrases
Quantum Well
100%
ZnCdSe
100%
Carrier Lifetime
100%
ZnTe
100%
ZnSe Quantum Dots
100%
Recombination
50%
Recombination Mechanism
50%
Quantum Dot Structures
50%
Spacer Thickness
50%
ZnSe Quantum Wells
50%
Molecular Beam Epitaxy
25%
Solar Cell
25%
Time-resolved Photoluminescence
25%
Band Diagram
25%
Power Dependence
25%
GaAs Substrate
25%
Zinc Selenide
25%
Cell-based
25%
Current Sampling
25%
Carrier Recombination
25%
PL Emission
25%
Sample Structure
25%
Excitation Power
25%
Time-resolved PL
25%
Type-II Transition
25%
Band Power
25%
Structure Coupling
25%
II-VI Semiconductors
25%
Engineering
Quantum Dot
100%
Quantum Well
100%
Carrier Lifetime
100%
Recombination Mechanism
50%
Band Diagram
25%
Based Solar Cell
25%
Gaas Substrate
25%
Sample Structure
25%
Compound Semiconductor
25%
Material Science
Quantum Dot
100%
Quantum Well
100%
Carrier Lifetime
100%
Gallium Arsenide
25%
Solar Cell
25%
Photoluminescence
25%
Molecular Beam Epitaxy
25%
II-VI Semiconductor
25%
Physics
Quantum Dot
100%
Quantum Wells
100%
Solar Cell
25%
Molecular Beam Epitaxy
25%
Photoluminescence
25%
Chemical Engineering
Molecular Beam Epitaxy
100%