@inproceedings{0205136a093f46519b367c7f18af9a68,
title = "Study of Enhancement-Mode Tri-Gate InAs HEMTs for Low Noise Application",
abstract = "An enhancement-mode tri-gate InAs HEMT is investigated for low noise application in this paper. The 3-D trigate structure is sidewall-gate-metal connected to InAlAs layers, the gate connection to the InAlAs layers increases their potential to the positive direction with increasing the gate bias, resulting gate control ability enhancement. Compared with planar device, the tri-gate device shows high transconductance and low noise figure. The enhancement-mode tri-gate device exhibits excellent low noise Figure with less than 3.5 dB when the device operation frequency range of 18 GHz to 50 GHz.",
keywords = "E-mode, InAs HEMT, low noise figure, tri-gate",
author = "C. Wang and Lin, {Y. C.} and Chien-Nan Kuo and Lee, {M. W.} and Yao, {J. N.} and Huang, {T. J.} and Heng-Tung Hsu and Chang, {Edward Yi}",
year = "2019",
month = sep,
doi = "10.23919/EuMIC.2019.8909607",
language = "English",
series = "EuMIC 2019 - 2019 14th European Microwave Integrated Circuits Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "204--207",
booktitle = "EuMIC 2019 - 2019 14th European Microwave Integrated Circuits Conference",
address = "美國",
note = "14th European Microwave Integrated Circuits Conference, EuMIC 2019 ; Conference date: 30-09-2019 Through 01-10-2019",
}