Study of Enhancement-Mode Tri-Gate InAs HEMTs for Low Noise Application

C. Wang, Y. C. Lin, Chien-Nan Kuo, M. W. Lee, J. N. Yao, T. J. Huang, Heng-Tung Hsu, Edward Yi Chang*

*此作品的通信作者

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

An enhancement-mode tri-gate InAs HEMT is investigated for low noise application in this paper. The 3-D trigate structure is sidewall-gate-metal connected to InAlAs layers, the gate connection to the InAlAs layers increases their potential to the positive direction with increasing the gate bias, resulting gate control ability enhancement. Compared with planar device, the tri-gate device shows high transconductance and low noise figure. The enhancement-mode tri-gate device exhibits excellent low noise Figure with less than 3.5 dB when the device operation frequency range of 18 GHz to 50 GHz.

原文English
主出版物標題EuMIC 2019 - 2019 14th European Microwave Integrated Circuits Conference
發行者Institute of Electrical and Electronics Engineers Inc.
頁面204-207
頁數4
ISBN(電子)9782874870569
DOIs
出版狀態Published - 9月 2019
事件14th European Microwave Integrated Circuits Conference, EuMIC 2019 - Paris, 法國
持續時間: 30 9月 20191 10月 2019

出版系列

名字EuMIC 2019 - 2019 14th European Microwave Integrated Circuits Conference

Conference

Conference14th European Microwave Integrated Circuits Conference, EuMIC 2019
國家/地區法國
城市Paris
期間30/09/191/10/19

指紋

深入研究「Study of Enhancement-Mode Tri-Gate InAs HEMTs for Low Noise Application」主題。共同形成了獨特的指紋。

引用此