Study of electrical characterization of 2-methyl-9, 10-di (2-naphthyl)anthracene doped with tungsten oxide as hole-transport layer

Ming Ta Hsieh; Meng Huan Ho; Kuan Heng Lin; Jenn-Fang Chen; Teng-Ming Chen; Chin H. Chen

doi:10.1063/1.3173824

Study of electrical characterization of 2-methyl-9, 10-di (2-naphthyl)anthracene doped with tungsten oxide as hole-transport layer

Ming Ta Hsieh^*, Meng Huan Ho, Kuan Heng Lin, Jenn-Fang Chen, Teng-Ming Chen, Chin H. Chen

^*此作品的通信作者

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

摘要

An efficient p -doped transport layer composed of an ambipolar material, 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) and tungsten oxide (WO ₃) has been developed. The admittance spectroscopy studies show that the incorporation of WO₃ into MADN can greatly improve the hole injection and the conductivity of the device. Moreover, when this p -doped layer was incorporated in the tris(8-quinolinolato)aluminum-based device, it achieved a current efficiency of 4.0 cd/A and a power efficiency of 2.4 lm/W at 20 mA/ cm². This work paves the way to simplify the fabrication of future p-i-n organic light-emitting devices with a single common ambipolar MADN material.

原文	English
文章編號	033501
期刊	Applied Physics Letters
卷	95
發行號	3
DOIs	https://doi.org/10.1063/1.3173824
出版狀態	Published - 2009

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title = "Study of electrical characterization of 2-methyl-9, 10-di (2-naphthyl)anthracene doped with tungsten oxide as hole-transport layer",

abstract = "An efficient p -doped transport layer composed of an ambipolar material, 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) and tungsten oxide (WO 3) has been developed. The admittance spectroscopy studies show that the incorporation of WO3 into MADN can greatly improve the hole injection and the conductivity of the device. Moreover, when this p -doped layer was incorporated in the tris(8-quinolinolato)aluminum-based device, it achieved a current efficiency of 4.0 cd/A and a power efficiency of 2.4 lm/W at 20 mA/ cm2. This work paves the way to simplify the fabrication of future p-i-n organic light-emitting devices with a single common ambipolar MADN material.",

author = "Hsieh, {Ming Ta} and Ho, {Meng Huan} and Lin, {Kuan Heng} and Jenn-Fang Chen and Teng-Ming Chen and Chen, {Chin H.}",

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AU - Hsieh, Ming Ta

AU - Ho, Meng Huan

AU - Lin, Kuan Heng

AU - Chen, Jenn-Fang

AU - Chen, Teng-Ming

AU - Chen, Chin H.

PY - 2009

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AB - An efficient p -doped transport layer composed of an ambipolar material, 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) and tungsten oxide (WO 3) has been developed. The admittance spectroscopy studies show that the incorporation of WO3 into MADN can greatly improve the hole injection and the conductivity of the device. Moreover, when this p -doped layer was incorporated in the tris(8-quinolinolato)aluminum-based device, it achieved a current efficiency of 4.0 cd/A and a power efficiency of 2.4 lm/W at 20 mA/ cm2. This work paves the way to simplify the fabrication of future p-i-n organic light-emitting devices with a single common ambipolar MADN material.

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JO - Applied Physics Letters

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Study of electrical characterization of 2-methyl-9, 10-di (2-naphthyl)anthracene doped with tungsten oxide as hole-transport layer

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