摘要
An efficient p -doped transport layer composed of an ambipolar material, 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) and tungsten oxide (WO 3) has been developed. The admittance spectroscopy studies show that the incorporation of WO3 into MADN can greatly improve the hole injection and the conductivity of the device. Moreover, when this p -doped layer was incorporated in the tris(8-quinolinolato)aluminum-based device, it achieved a current efficiency of 4.0 cd/A and a power efficiency of 2.4 lm/W at 20 mA/ cm2. This work paves the way to simplify the fabrication of future p-i-n organic light-emitting devices with a single common ambipolar MADN material.
原文 | English |
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文章編號 | 033501 |
期刊 | Applied Physics Letters |
卷 | 95 |
發行號 | 3 |
DOIs | |
出版狀態 | Published - 2009 |