Study of AlGaN/GaN High-Electron-Mobility Transistors on Si Substrate with Thick Copper-Metallized Interconnects for Ka-Band Applications

Ming Wen Lee, Yueh Chin Lin, Kuan Hsien Lai, You Chen Weng, Heng Tung Hsu, Edward Yi Chang*

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Herein, the AlGaN/GaN high-electron-mobility transistors (HEMTs) on silicon substrates using thick copper-metallized interconnects with Pt diffusion barrier layer for Ka-band application are reported. High output power density of 6.6 W mm−1 with power-added efficiency (PAE) of 45.6% at 28 GHz is achieved for the 4 × 50 μm device in continuous-wave (CW) mode. No obvious change in the drain–source current (I DS) is observed for the device under 40 V high-voltage stress for 100 h and the device shows good thermal stability when annealed at 300 °C for 30 min. It demonstrates that the AlGaN/GaN HEMTs on silicon substrate with thick copper-metallized interconnects can enhance the device performance with good reliability for future 5 G applications.

原文English
文章編號2200536
期刊Physica Status Solidi (A) Applications and Materials Science
220
發行號8
DOIs
出版狀態Published - 4月 2023

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