Studies on damage removing efficiency of B11+ and BF+2 implanted Si0.84Ge0.16 epilayers by rapid thermal annealing

L. P. Chen*, T. C. Chou, Chao-Hsin Chien, C. Y. Chang

*此作品的通信作者

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

High quality metastable pseudomorphic Si1-xGex epilayers were grown by ultrahigh vacuum chemical vapor deposition using Si2H6 and GeH4. These epilayers were implanted with 40 keV B11+ and 100 keV BF+2 ions at a dose of 1×1015 ions/cm2 and then annealed by rapid thermal annealing (RTA) processes at temperatures of 600, 650, 700, and 750°C for 30 s duration. Double-crystal x-ray diffractometry was used to evaluate the level of the implant-induced damage and the damage removing efficiency of both ion implanted samples at different RTA conditions. The results show that the RTA process is more effective at removing damage from B11+ implanted samples than from those implanted with BF+2.

原文English
頁(從 - 到)232-234
頁數3
期刊Applied Physics Letters
68
發行號2
DOIs
出版狀態Published - 1 12月 1995

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